Induced quantum dot probe for material characterization

Abstract

We propose a non-destructive means of characterizing a semiconductor wafer via measuring parameters of an induced quantum dot on the material system of interest with a separate probe chip that can also house the measurement circuitry. We show that a single wire can create the dot, determine if an electron is present, and be used to measure critical device parameters. Adding more wires enables more complicated (potentially multi-dot) systems and measurements. As one application for this concept we consider silicon metal-oxide-semiconductor and silicon/silicon-germanium quantum dot qubits relevant to quantum computing and show how to measure low-lying excited states (so-called "valley" states). This approach provides an alternative method for characterization of parameters that are critical for various semiconductor-based quantum dot devices without fabricating such devices.

arXiv comment5 pages, 3 figures

References in corpus (25)

• Silicon Quantum Electronics
• An addressable quantum dot qubit with fault-tolerant control fidelity
• Probing condensed matter physics with magnetometry based on nitrogen-vacancy centres in diamond
• A CMOS silicon spin qubit
• Electrical control of a long-lived spin qubit in a Si/SiGe quantum dot
• Strong spin-photon coupling in silicon
• Spin-valley lifetimes in a silicon quantum dot with tunable valley splitting
• Dispersive Readout of a Few-Electron Double Quantum Dot with Fast rf Gate-Sensors
• Ion traps with enhanced optical and physical access
• A high-sensitivity gate-based charge sensor in silicon
• Charge and spin state readout of a double quantum dot coupled to a resonator
• A Reconfigurable Gate Architecture for Si/SiGe Quantum Dots
• Observation of quantum capacitance in the Cooper-pair transistor
• Direct Observation of Josephson Capacitance
• Electron spin resonance and spin-valley physics in a silicon double quantum dot
• Integrated silicon qubit platform with single-spin addressability, exchange control and robust single-shot singlet-triplet readout
• Quantum and Tunnelling Capacitance in Charge and Spin Qubits
• Mesoscopic admittance of a double quantum dot
• Dispersive readout of valley splittings in cavity-coupled silicon quantum dots
• Electron g-factor of valley states in realistic silicon quantum dots
• Disorder-induced valley-orbit hybrid states in Si quantum dots
• A near-field scanning microwave microscope based on a superconducting resonator for low power measurements
• Dispersive readout of a silicon quantum dot with an accumulation-mode gate sensor
• Theory of barrier vs tilt exchange gate operations in spin-based quantum computing
• Valley filtering and spatial maps of coupling between silicon donors and quantum dots

Cited by in corpus (9)

• Semiconductor Spin Qubits
• Superconductor-semiconductor hybrid cavity quantum electrodynamics
• Cryogen-free scanning gate microscope for the characterization of Si/Si${}_{0.7}$Ge${}_{0.3}$ quantum devices at milli-Kelvin temperatures
• Spin-Valley Qubit Dynamics In Exchange Coupled Silicon Quantum Dots
• Radio-frequency C-V measurements with sub-attofarad sensitivity
• Democratizing Spin Qubits
• Scanned single-electron probe inside a silicon electronic device
• Second Quantization: Gating a Quantum Dot Through the Sequential Removal of Single Electrons from a Nanoscale Floating Gate
• Towards Utilizing Scanning Gate Microscopy as a High-Resolution Probe of Valley Splitting in Si/SiGe Heterostructures