Disorder-induced valley-orbit hybrid states in Si quantum dots

Abstract

Quantum dots in silicon are promising candidates for implementation of solid-state quantum information processing. It is important to understand the effects of the multiple conduction band valleys of silicon on the properties of these devices. Here we introduce a novel, systematic effective mass theory of valley-orbit coupling in disordered silicon systems. This theory reveals valley-orbit hybridization effects that are detrimental for storing quantum information in the valley degree of freedom, including non-vanishing dipole matrix elements between valley states and altered intervalley tunneling.

7 pages, 3 figures

References in corpus (7)

• Driven coherent oscillations of a single electron spin in a quantum dot
• Demonstration of Entanglement of Electrostatically Coupled Singlet-Triplet Qubits
• Valley Polarization in Si(100) at Zero Magnetic Field
• Magnetic field dependence of valley splitting in realistic Si/SiGe quantum wells
• Extended interface states enhance valley splitting in Si/SiO2
• Impact of the valley degree of freedom on the control of donor electrons near a Si/SiO_2 interface
• Multimillion Atom Simulations with NEMO 3-D

Cited by in corpus (42)

• Electrical control of a long-lived spin qubit in a Si/SiGe quantum dot
• Electrically driven electron spin resonance mediated by spin-valley-orbit coupling in a silicon quantum dot
• Electron spin resonance and spin-valley physics in a silicon double quantum dot
• High Resolution Valley Spectroscopy of Si Quantum Dots
• Atomic fluctuations lifting the energy degeneracy in Si/SiGe quantum dots
• Blueprint of a scalable spin qubit shuttle device for coherent mid-range qubit transfer in disordered Si/SiGe/SiO${}_2$
• Spin relaxation in a Si quantum dot due to spin-valley mixing
• Valley dependent anisotropic spin splitting in silicon quantum dots
• Practical Strategies for Enhancing the Valley Splitting in Si/SiGe Quantum Wells
• Electron g-factor of valley states in realistic silicon quantum dots
• Valley splitting of single-electron Si MOS quantum dots
• Spin Relaxation due to Charge Noise
• Giant anisotropy of spin relaxation and spin-valley mixing in a silicon quantum dot
• Tunable Spin Qubit Coupling Mediated by a Multi-Electron Quantum Dot
• Detuning Axis Pulsed Spectroscopy of Valley-Orbital States in Si/SiGe Quantum Dots
• Hybrid spin and valley quantum computing with singlet-triplet qubits
• Control of valley dynamics in silicon quantum dots in the presence of an interface step
• Second Harmonic Coherent Driving of a Spin Qubit in a Si/SiGe Quantum Dot
• How valley-orbit states in silicon quantum dots probe quantum well interfaces
• Nonlinear response and crosstalk of electrically driven silicon spin qubits
• Dressed photon-orbital states in a quantum dot: Inter-valley spin resonance
• Ultrafast and Electrically Tunable Rabi Frequency in a Germanium Hut Wire Hole Spin Qubit
• Effects of Interface Steps on the Valley Orbit coupling in a Si/SiGe quantum dot
• Two-body Wigner molecularization in asymmetric quantum dot spin qubits
• Probing the Spatial Variation of the Inter-Valley Tunnel Coupling in a Silicon Triple Quantum Dot
• Switching between relaxation hotspots and coldspots in disordered spin qubits
• Signatures of atomic-scale structure in the energy dispersion and coherence of a Si quantum-dot qubit
• Impact of valley phase and splitting on readout of silicon spin qubits
• Transporting a single-spin qubit through a double quantum dot
• Phonon-assisted relaxation and decoherence of singlet-triplet qubits in Si/SiGe quantum dots
• Valley Phase and Voltage Control of Coherent Manipulation in Si Quantum Dots
• Effect of quantum Hall edge strips on valley splitting in silicon quantum wells
• Electric dipole spin resonance in systems with a valley dependent g-factor
• Induced quantum dot probe for material characterization
• Direct measurement of electron intervalley relaxation in a Si/SiGe quantum dot
• Orbital hyperfine interaction and qubit dephasing in carbon nanotube quantum dots
• Valley Splitting Correlations Across a Silicon Quantum Well Containing Germanium
• Suppressing Si Valley Excitation and Valley-Induced Spin Dephasing for Long-Distance Shuttling
• Proposed Five-Electron Charge Quadrupole Qubit
• Omnidirectional shuttling to avoid valley excitations in Si/SiGe quantum wells
• Towards Utilizing Scanning Gate Microscopy as a High-Resolution Probe of Valley Splitting in Si/SiGe Heterostructures
• Impact of the valley orbit coupling on exchange gate for spin qubits in silicon quantum dots