activity
19982026
most citedSilicon Quantum Electronics

1.2k citations · 7.5k across the 80 of their papers we have counts for

collaborators

80 papers

cond-mat.mes-hall2026

Depth-Resolved Lattice Distortions in a Silicon-Germanium Qubit Host

Jonathan C. Marcks, E. S. Joseph, J. Reily +6

Semiconductor qubits, promising for quantum computation, inherit properties from their host lattice. Quantum dot spins, occupying the local lowest energy states in the conduction b…

cond-mat.mes-hall2023★ 1 cited

Control of threshold voltages in Si/SiGe quantum devices via optical illumination

M. A. Wolfe, Brighton X. Coe, Justin S. Edwards +9

Optical illumination of quantum-dot qubit devices at cryogenic temperatures, while not well studied, is often used to recover operating conditions after undesired shocking events o…

cond-mat.mtrl-sci2021★ 3 cited

A Simple Numerical Method for Evaluating Heat Dissipation from Curved Wires with Periodic Applied Heating

Gabriel R. Jaffe, Victor W. Brar, Max G. Lagally +1

In many situations, the dual-purpose heater/thermometer wires used in the three-omega method, one of the most precise and sensitive techniques for measuring the thermal conductivit…

cond-mat.mes-hall2021★ 46 cited

Valley splittings in Si/SiGe quantum dots with a germanium spike in the silicon well

Thomas McJunkin, E. R. MacQuarrie, Leah Tom +11

Silicon-germanium heterostructures have successfully hosted quantum dot qubits, but the intrinsic near-degeneracy of the two lowest valley states poses an obstacle to high fidelity…

cond-mat.mes-hall2021★ 37 cited

How valley-orbit states in silicon quantum dots probe quantum well interfaces

J. P. Dodson, H. Ekmel Ercan, J. Corrigan +7

The energies of valley-orbit states in silicon quantum dots are determined by an as yet poorly understood interplay between interface roughness, orbital confinement, and electron i…

cond-mat.mtrl-sci2021★ 61 cited

Long Phonon Mean Free Paths Observed in Cross-plane Thermal-Conductivity Measurements of Exfoliated Hexagonal Boron Nitride

Gabriel R. Jaffe, Keenan J. Smith, Kenji Watanabe +4

Sub-micron-thick layers of hexagonal boron nitride (hBN) exhibit high in-plane thermal conductivity, useful optical properties, and serve as dielectric encapsulation layers with lo…