Depth-Resolved Lattice Distortions in a Silicon-Germanium Qubit Host
arXiv:2607.26962
The authors use X‑ray nano‑structural mapping to resolve lattice distortions and strain in a Si/SiGe chip used for quantum dot qubits, revealing how growth‑induced defects propagate through the heterostructure and influence qubit energy spectra.
Abstract
Semiconductor qubits, promising for quantum computation, inherit properties from their host lattice. Quantum dot spins, occupying the local lowest energy states in the conduction band, necessarily couple to structural disorder and interfaces. While silicon-based systems promise low noise alongside industrially compatible manufacturing, the growth of SiGe---a leading platform---unavoidably introduces lattice dislocations, inhomogeneous strain, and crosshatch patterns, expected to cause fluctuations between devices, qubit failure, and subsequently higher operational overhead. Through X-ray nano-structural mapping of an Intel Si/SiGe chip, we reveal, with 30nm lateral and 200nm functional depth resolution, how extended lattice defects introduced during growth propagate through the heterostructure, creating permanently distorted lattice planes and strain. We correlate these at the m scale of a quantum dot device and calculate the impact on qubit energy spectra. We observe crosshatch fine structure and find that substrate miscut and growth correlate with the final crosshatch pattern.
14 pages, 5 main text figures and 6 supplemental figures