14 citations · 17 across the 6 of their papers we have counts for
6 papers
Depth-Resolved Lattice Distortions in a Silicon-Germanium Qubit Host
Jonathan C. Marcks, E. S. Joseph, J. Reily +6
Semiconductor qubits, promising for quantum computation, inherit properties from their host lattice. Quantum dot spins, occupying the local lowest energy states in the conduction b…
Direct measurement of the energy spectrum of a quantum dot qubit
J. Reily, Daniel J. King, Jonathan C. Marcks +8
The mapping between gate voltages applied to a double quantum dot, and the parameters of a Hubbard-like Hamiltonian, is of utmost importance for understanding and operating spin qu…
A scanning probe microscopy approach for identifying defects in aluminum oxide
Leah Tom, Zachary J. Krebs, Joel B. Varley +8
The coherence of quantum dot qubits fabricated in semiconductors is often limited by charge noise from defects in gate dielectrics, which are material- and process-dependent. Chara…
Non-equilibrium Dynamics of Two-level Systems directly after Cryogenic Alternating Bias
V. Iaia, E. S. Joseph, S. Im +10
Two-level systems (TLSs) are tunneling states commonly found in amorphous materials that electrically couple to qubits, resonators, and vibrational modes in materials, leading to e…
Reducing strain fluctuations in quantum dot devices by gate-layer stacking
Collin C. D. Frink, Talise Oh, E. S. Joseph +5
Nanofabricated metal gate electrodes are commonly used to confine and control electrons in electrostatically defined quantum dots. However, these same gates impart strain-induced p…
Coupling conduction-band valleys in SiGe heterostructures via shear strain and Ge concentration oscillations
Benjamin D. Woods, Hudaiba Soomro, E. S. Joseph +4
Engineering conduction-band valley couplings is a key challenge for Si-based spin qubits. Recent work has shown that the most reliable method for enhancing valley couplings entails…