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cond-mat.mes-hall2005★ 31 cited
Quantum dots in Si/SiGe 2DEGs with Schottky top-gated leads
K A Slinker, K L M Lewis, C C Haselby +8
We report on the fabrication and characterization of quantum dot devices in a Schottky-gated silicon/silicon-germanium two-dimensional electron gas (2DEG). The dots are confined la…
cond-mat.mes-hall2005★ 15 cited
Quantum Dots and Etch-Induced Depletion of a Silicon 2DEG
L. J. Klein, K. L. M. Lewis, K. A. Slinker +8
The controlled depletion of electrons in semiconductors is the basis for numerous devices. Reactive-ion etching provides an effective technique for fabricating both classical and q…