87 citations · 366 across the 18 of their papers we have counts for
18 papers
Complete measurement of tunnel- and valley-coupling parameters in a silicon double quantum dot
Daniel J. King, Minyoung Kim, J. Reily +4
Tunneling is essential in the initialization, measurement, and control of quantum dot qubits. In silicon, such tunneling connects not only the qubit states but also valley minima i…
High-fidelity EDSR in Si/SiGe Wiggle Wells
Hudaiba Soomro, Minyoung Kim, Avani Vivrekar +3
Si/SiGe quantum wells that incorporate Ge concentration oscillations, known as long-period Wiggle Wells, have been shown to enhance the Dresselhaus spin-orbit coupling of conductio…
Individually tunable Si/SiGe quantum dot operating voltages via gate-biased illumination
Jared Benson, Sanghyeok Park, Owen M. Eskandari +6
Semiconductor quantum dot qubits often require very different voltages on each gate to bring them to a correct operating point. Here, we present a method by which one can controlla…
Large quantum dot energy level shifts in anomalous photon-assisted tunneling
Jared Benson, C. E. Sturner, A. R. Huffman +12
Orbital energy splittings are important quantum dot parameters for the operation of hole spin qubits. They are known to depend on the lateral confinement of the quantum dots. Howev…
Direct measurement of the energy spectrum of a quantum dot qubit
J. Reily, Daniel J. King, Jonathan C. Marcks +8
The mapping between gate voltages applied to a double quantum dot, and the parameters of a Hubbard-like Hamiltonian, is of utmost importance for understanding and operating spin qu…
Statistical characterization of valley coupling in Si/SiGe quantum dots via -factor measurements near a valley vortex
Benjamin D. Woods, Merritt P. Losert, Nasir R. Elston +5
The presence of low-energy valley excitations in Si/SiGe heterostructures often causes spin qubits to fail. It is therefore important to develop robust protocols for characterizing…
Omnidirectional shuttling to avoid valley excitations in Si/SiGe quantum wells
Róbert Németh, Vatsal K. Bandaru, Pedro Alves +7
Conveyor-mode shuttling is a key approach for implementing intermediate-range coupling between electron-spin qubits in quantum dots. Initial implementations are encouraging; howeve…
Ultra-dispersive resonator readout of a quantum-dot qubit using longitudinal coupling
Benjamin Harpt, J. Corrigan, Nathan Holman +10
We perform readout of a quantum-dot hybrid qubit coupled to a superconducting resonator through a parametric, longitudinal interaction mechanism. Our experiments are performed with…
Reducing strain fluctuations in quantum dot devices by gate-layer stacking
Collin C. D. Frink, Talise Oh, E. S. Joseph +5
Nanofabricated metal gate electrodes are commonly used to confine and control electrons in electrostatically defined quantum dots. However, these same gates impart strain-induced p…
Coupling conduction-band valleys in SiGe heterostructures via shear strain and Ge concentration oscillations
Benjamin D. Woods, Hudaiba Soomro, E. S. Joseph +4
Engineering conduction-band valley couplings is a key challenge for Si-based spin qubits. Recent work has shown that the most reliable method for enhancing valley couplings entails…
Practical Strategies for Enhancing the Valley Splitting in Si/SiGe Quantum Wells
Merritt P. Losert, M. A. Eriksson, Robert Joynt +4
Silicon/silicon-germanium heterostructures have many important advantages for hosting spin qubits. However, controlling the valley splitting (the energy splitting between the two l…
Longitudinal coupling between a Si/SiGe quantum dot and an off-chip TiN resonator
J. Corrigan, Benjamin Harpt, Nathan Holman +10
Superconducting cavities have emerged as a key tool for measuring the spin states of quantum dots. So far however, few experiments have explored longitudinal couplings between dots…
Latched readout for the quantum dot hybrid qubit
J. Corrigan, J. P. Dodson, Brandur Thorgrimsson +5
A primary method of reading out a quantum dot hybrid qubit involves projection of the logical basis onto distinct charge states that are readily detected by an integrated charge se…
Spin-orbit enhancement in Si/SiGe heterostructures with oscillating Ge concentration
Benjamin D. Woods, M. A. Eriksson, Robert Joynt +1
We show that Ge concentration oscillations within the quantum well region of a Si/SiGe heterostructure can significantly enhance the spin-orbit coupling of the low-energy conductio…
SiGe quantum wells with oscillating Ge concentrations for quantum dot qubits
Thomas McJunkin, Benjamin Harpt, Yi Feng +10
Large-scale arrays of quantum-dot spin qubits in Si/SiGe quantum wells require large or tunable energy splittings of the valley states associated with degenerate conduction band mi…
Toward Robust Autotuning of Noisy Quantum Dot Devices
Joshua Ziegler, Thomas McJunkin, E. S. Joseph +7
The current autotuning approaches for quantum dot (QD) devices, while showing some success, lack an assessment of data reliability. This leads to unexpected failures when noisy or…
Coherent control and spectroscopy of a semiconductor quantum dot Wigner molecule
J. Corrigan, J. P. Dodson, H. Ekmel Ercan +12
Multi-electron semiconductor quantum dots have found wide application in qubits, where they enable readout and enhance polarizability. However, coherent control in such dots has ty…
Extending the coherence of a quantum dot hybrid qubit
Brandur Thorgrimsson, Dohun Kim, Yuan-Chi Yang +10
Identifying and ameliorating dominant sources of decoherence are important steps in understanding and improving quantum systems. Here we show that the free induction decay time ($T…