Latched readout for the quantum dot hybrid qubit
arXiv:2210.08315 · doi:10.1063/5.0130865
Abstract
A primary method of reading out a quantum dot hybrid qubit involves projection of the logical basis onto distinct charge states that are readily detected by an integrated charge sensing dot. However, in the simplest configuration, the excited charge state decays rapidly, making single-shot readout challenging. Here, we demonstrate a readout procedure where the qubit excited state is latched to a metastable charge configuration whose lifetime is tunnel rate limited, persisting here as long as 2.5 ms. Additionally, we show that working in the (4,1)-(3,2) charge configuration enables a latched readout window that is larger and more tunable than typical charge configurations, because the size of the readout window is determined by an orbital splitting rather than a valley splitting.
References in corpus (28)
- Quantum Computation with Quantum Dots
- The Physical Implementation of Quantum Computation
- Single-shot read-out of an individual electron spin in a quantum dot
- Driven coherent oscillations of a single electron spin in a quantum dot
- Universal Quantum Computation with the Exchange Interaction
- Demonstration of Entanglement of Electrostatically Coupled Singlet-Triplet Qubits
- Quantum Coherence in a One-Electron Semiconductor Charge Qubit
- Reduced sensitivity to charge noise in semiconductor spin qubits via symmetric operation
- Quantum control and process tomography of a semiconductor quantum dot hybrid qubit
- Singlet-triplet spin blockade and charge sensing in a few-electron double quantum dot
- A fast "hybrid" silicon double quantum dot qubit
- Microwave-driven coherent operations of a semiconductor quantum dot charge qubit
- Universal logic with encoded spin qubits in silicon
- Excited-state spectroscopy on a nearly-closed quantum dot via charge detection
- Measurement of valley splitting in high-symmetry Si/SiGe quantum dots
- Extending the coherence of a quantum dot hybrid qubit
- Charge Relaxation in a Single Electron Si/SiGe Double Quantum Dot
- High-fidelity single-shot readout for a spin qubit via an enhanced latching mechanism
- All-Microwave Control and Dispersive Readout of Gate-Defined Quantum Dot Qubits in Circuit Quantum Electrodynamics
- Energy Dependent Tunneling in a Quantum Dot
- Spin filling of valley-orbit states in a silicon quantum dot
- Orbital and valley state spectra of a few-electron silicon quantum dot
- Enhanced charge detection of spin qubit readout via an intermediate state
- Valley splittings in Si/SiGe quantum dots with a germanium spike in the silicon well
- Coherent control and spectroscopy of a semiconductor quantum dot Wigner molecule
- How valley-orbit states in silicon quantum dots probe quantum well interfaces
- Fabrication process and failure analysis for robust quantum dots in silicon
- Magnetic Gradient Fluctuations from Quadrupolar Ge in Si/SiGe Exchange-Only Qubits