75 citations · 491 across the 18 of their papers we have counts for
18 papers
On-Demand Correlated Errors in Superconducting Qubits from a Particle Accelerator
Thomas McJunkin, A. W. Hunt, Yenuel Jones-Alberty +9
Ionizing radiation is a known source of correlated errors in superconducting quantum processors, inhibiting the functionality of quantum error correction surface codes. High-energy…
Control of threshold voltages in Si/SiGe quantum devices via optical illumination
M. A. Wolfe, Brighton X. Coe, Justin S. Edwards +9
Optical illumination of quantum-dot qubit devices at cryogenic temperatures, while not well studied, is often used to recover operating conditions after undesired shocking events o…
Latched readout for the quantum dot hybrid qubit
J. Corrigan, J. P. Dodson, Brandur Thorgrimsson +5
A primary method of reading out a quantum dot hybrid qubit involves projection of the logical basis onto distinct charge states that are readily detected by an integrated charge se…
SiGe quantum wells with oscillating Ge concentrations for quantum dot qubits
Thomas McJunkin, Benjamin Harpt, Yi Feng +10
Large-scale arrays of quantum-dot spin qubits in Si/SiGe quantum wells require large or tunable energy splittings of the valley states associated with degenerate conduction band mi…
Toward Robust Autotuning of Noisy Quantum Dot Devices
Joshua Ziegler, Thomas McJunkin, E. S. Joseph +7
The current autotuning approaches for quantum dot (QD) devices, while showing some success, lack an assessment of data reliability. This leads to unexpected failures when noisy or…
Valley splittings in Si/SiGe quantum dots with a germanium spike in the silicon well
Thomas McJunkin, E. R. MacQuarrie, Leah Tom +11
Silicon-germanium heterostructures have successfully hosted quantum dot qubits, but the intrinsic near-degeneracy of the two lowest valley states poses an obstacle to high fidelity…
How valley-orbit states in silicon quantum dots probe quantum well interfaces
J. P. Dodson, H. Ekmel Ercan, J. Corrigan +7
The energies of valley-orbit states in silicon quantum dots are determined by an as yet poorly understood interplay between interface roughness, orbital confinement, and electron i…
Theoretical bounds on data requirements for the ray-based classification
Brian J. Weber, Sandesh S. Kalantre, Thomas McJunkin +2
The problem of classifying high-dimensional shapes in real-world data grows in complexity as the dimension of the space increases. For the case of identifying convex shapes of diff…
Ray-based framework for state identification in quantum dot devices
Justyna P. Zwolak, Thomas McJunkin, Sandesh S. Kalantre +4
Quantum dots (QDs) defined with electrostatic gates are a leading platform for a scalable quantum computing implementation. However, with increasing numbers of qubits, the complexi…
Radio frequency reflectometry in silicon-based quantum dots
Y. -Y. Liu, S. G. J. Philips, L. A. Orona +6
RF reflectometry offers a fast and sensitive method for charge sensing and spin readout in gated quantum dots. We focus in this work on the implementation of RF readout in accumula…
Ray-based classification framework for high-dimensional data
Justyna P. Zwolak, Sandesh S. Kalantre, Thomas McJunkin +2
While classification of arbitrary structures in high dimensions may require complete quantitative information, for simple geometrical structures, low-dimensional qualitative inform…
Coherent control and spectroscopy of a semiconductor quantum dot Wigner molecule
J. Corrigan, J. P. Dodson, H. Ekmel Ercan +12
Multi-electron semiconductor quantum dots have found wide application in qubits, where they enable readout and enhance polarizability. However, coherent control in such dots has ty…
Fabrication process and failure analysis for robust quantum dots in silicon
J. P. Dodson, Nathan Holman, Brandur Thorgrimsson +7
We present an improved fabrication process for overlapping aluminum gate quantum dot devices on Si/SiGe heterostructures that incorporates low-temperature inter-gate oxidation, the…
The effect of external electric fields on silicon with superconducting gallium nano-precipitates
Brandur Thorgrimsson, Thomas McJunkin, E. R. MacQuarrie +2
Motivated by potential transformative applications of nanoelectronic circuits that incorporate superconducting elements, and by the advantages of integrating these elements in a si…
Auto-tuning of double dot devices in situ with machine learning
Justyna P. Zwolak, Thomas McJunkin, Sandesh S. Kalantre +7
The current practice of manually tuning quantum dots (QDs) for qubit operation is a relatively time-consuming procedure that is inherently impractical for scaling up and applicatio…
Measurements of capacitive coupling within a quadruple quantum dot array
Samuel F. Neyens, E. R. MacQuarrie, J. P. Dodson +9
We present measurements of the capacitive coupling energy and the inter-dot capacitances in a linear quadruple quantum dot array in undoped Si/SiGe. With the device tuned to a regi…
The critical role of substrate disorder in valley splitting in Si quantum wells
Samuel F. Neyens, Ryan H. Foote, Brandur Thorgrimsson +11
Motivated by theoretical predictions that spatially complex concentration modulations of Si and Ge can increase the valley splitting in quantum wells, we grow and characterize Si/S…
Doping-dependent critical Cooper-pair momentum in thin, underdoped cuprate films
John Draskovic, Stanley Steers, Thomas McJunkin +2
We apply a recently-developed low-field technique to inductively measure the critical pair momentum in thin, underdoped films of YCaBaCuO an…