Energy Dependent Tunneling in a Quantum Dot

Abstract

We present measurements of the rates for an electron to tunnel on and off a quantum dot, obtained using a quantum point contact charge sensor. The tunnel rates show exponential dependence on drain-source bias and plunger gate voltages. The tunneling process is shown to be elastic, and a model describing tunneling in terms of the dot energy relative to the height of the tunnel barrier quantitatively describes the measurements.

4 pages, 4 figures

References in corpus (6)

• Single-shot read-out of an individual electron spin in a quantum dot
• Driven coherent oscillations of a single electron spin in a quantum dot
• Counting statistics and super-Poissonian noise in a quantum dot
• Excited-state spectroscopy on a nearly-closed quantum dot via charge detection
• Phonon-induced electron relaxation in weakly-confined single and coupled quantum dots
• Coupling symmetry of quantum dot states

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