Coupling symmetry of quantum dot states

Abstract

With non-invasive methods, we investigate ground and excited states of a lateral quantum dot. Charge detection via a quantum point contact is used to map the dot dynamics in a regime where the current through the dot is too low for transport measurements. In this way we investigate and compare the tunneling rates from the dot to source and drain. We find a symmetry line on which the tunneling rates to both leads are equal. In this situation ground states as well as excited states influence the mean charge of the dot. A detailed study in this regime reveals that the coupling symmetry depends on the number of states contributing to transport and on the spatial distribution of individual states.

4 pages, 4 figures

References in corpus (7)

• Single-shot read-out of an individual electron spin in a quantum dot
• Few-Electron Quantum Dot Circuit with Integrated Charge Read-Out
• Excited-state spectroscopy on a nearly-closed quantum dot via charge detection
• Negative differential conductance induced by spin-charge separation
• Latched Detection of Excited States in an Isolated Double Quantum Dot
• Finite bias charge detection in a quantum dot
• Non-invasive detection of charge-rearrangement in a quantum dot in high magnetic fields

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• Single electron charging of impurity sites visualized by scanning gate experiments on a quantum point contact
• Counting statistics in an InAs nanowire quantum dot with a vertically coupled charge detector
• Non-invasive detection of molecular bonds in quantum dots
• Dark channels in resonant tunneling transport through artificial atoms
• Decoherence enhanced quantum measurement of a quantum dot spin qubit
• Coherence of an Electronic Two-Level System under Continuous Charge Sensing by a Quantum Dot Detector
• Quantum dot occupation and electron dwell time in the cotunneling regime
• Phonon influence on the measurement of spin states in double quantum dots using the quantum point contact
• Charge detection of a quantum dot under different tunneling barrier symmetries and bias voltages