activity
20002022
most citedUniversal oscillations in counting statistics

254 citations · 2k across the 42 of their papers we have counts for

collaborators

42 papers

cond-mat.mes-hall2022★ 35 cited

Two electrons interacting at a mesoscopic beam splitter

Niels Ubbelohde, Lars Freise, Elina Pavlovska +8

The non-linear response of a beam splitter to the coincident arrival of interacting particles enables numerous applications in quantum engineering and metrology yet poses considera…

cond-mat.mes-hall2021

Controlling the error mechanism in a tunable-barrier non-adiabatic charge pump by dynamic gate compensation

Frank Hohls, Vyacheslavs Kashcheyevs, Friederike Stein +3

Single-electron pumps based on tunable-barrier quantum dots are the most promising candidates for a direct realization of the unit ampere in the recently revised SI: they are simpl…

cond-mat.mes-hall2021★ 9 cited

Non-adiabatic single-electron pump in a dopant-free GaAs/AlGaAs 2DEG

B. Buonacorsi, F. Sfigakis, A. Shetty +7

We have realized quantized charge pumping using non-adiabatic single-electron pumps in dopant-free GaAs two-dimensional electron gases (2DEGs). The dopant-free III-V platform allow…

cond-mat.mes-hall2019★ 10 cited

Quantum dot state initialization by control of tunneling rates

Tobias Wenz, Jevgeny Klochan, Frank Hohls +3

We study the loading of electrons into a quantum dot with dynamically controlled tunnel barriers. We introduce a method to measure tunneling rates for individual discrete states an…

cond-mat.mes-hall2019★ 21 cited

Trapping and counting ballistic non-equilibrium electrons

L. Freise, T. Gerster, D. Reifert +4

We demonstrate the trapping of electrons propagating ballistically at far-above-equilibrium energies in GaAs/AlGaAs heterostructures in high magnetic field. We find low-loss transp…

cond-mat.mtrl-sci2018★ 35 cited

Homogeneous Large-area Quasi-freestanding Monolayer and Bilayer Graphene on SiC

Davood Momeni Pakdehi, Klaus Pierz, Stefan Wundrack +9

In this study, we first show that the argon flow during epitaxial graphene growth is an important parameter to control the quality of the buffer and the graphene layer. Atomic forc…