Nonequilibrium mesoscopic conductance fluctuations as the origin of 1/f noise in epitaxial graphene
arXiv:1609.04950 · doi:10.1103/PhysRevB.94.205430
Abstract
We investigate the 1/f noise properties of epitaxial graphene devices at low temperatures as a function of temperature, current and magnetic flux density. At low currents, an exponential decay of the 1/f noise power spectral density with increasing temperature is observed that indicates mesoscopic conductance fluctuations as the origin of 1/f noise at temperatures below 50 K. At higher currents, deviations from the typical quadratic current dependence and the exponential temperature dependence occur as a result of nonequilibrium conditions due to current heating. By applying the theory of Kubakaddi [S. S. Kubakaddi, Phys. Rev. B 79, 075417 (2009)], a model describing the 1/f noise power spectral density of nonequilibrium mesoscopic conductance fluctuations in epitaxial graphene is developed and used to determine the energy loss rate per carrier. In the regime of Shubnikov-de Haas oscillations a strong increase of 1/f noise is observed, which we attribute to an additional conductance fluctuation mechanism due to localized states in quantizing magnetic fields. When the device enters the regime of quantized Hall resistance, the 1/f noise vanishes. It reappears if the current is increased and the quantum Hall breakdown sets in.
References in corpus (36)
- Electric Field Effect in Atomically Thin Carbon Films
- Two-Dimensional Gas of Massless Dirac Fermions in Graphene
- Temperature dependent transport in suspended graphene
- Weak localisation magnetoresistance and valley symmetry in graphene
- Strong suppression of weak (anti)localization in graphene
- Acoustic phonon scattering limited carrier mobility in 2D extrinsic graphene
- Review of the Low-Frequency 1/f Noise in Graphene Devices
- Electronic transport in graphene: A semi-classical approach including midgap states
- SiC Graphene Suitable For Quantum Hall Resistance Metrology
- Quantum Resistance Standard Based on Epitaxial Graphene
- Weak antilocalization in epitaxial graphene: evidence for chiral electrons
- The microscopic nature of localization in the quantum Hall effect
- Charge transfer between epitaxial graphene and silicon carbide
- Low-noise top-gate graphene transistors
- Encapsulation and Electronic Control of Epitaxial Graphene by Photosensitive Polymers and UV light
- Evolution of Microscopic Localization in Graphene in a Magnetic Field from Scattering Resonances to Quantum Dots
- Phenomenological study of the electronic transport coefficients of graphene
- Anomalously strong pinning of the filling factor nu=2 in epitaxial graphene
- Manifestation of electron-electron interaction in the magnetoresistance of graphene
- Electronic transport and the localization length in the quantum Hall effect
- Hopping conductivity in the quantum Hall effect -- revival of universal scaling
- Impurities as a source of flicker noise in graphene
- The nature of localization in graphene under quantum Hall conditions
- Weak localization scattering lengths in epitaxial, and CVD graphene
- Correlation between resistance fluctuations and temperature dependence of conductivity in graphene
- Epitaxial graphene on SiC: Modification of structural and electron transport properties by substrate pretreatment
- Transconductance fluctuations as a probe for interaction induced quantum Hall states in graphene
- Precision quantization of Hall resistance in transferred graphene
- Precision Quantum Hall Resistance Measurement on Epitaxial Graphene Device in Low Magnetic Field
- Towards a Graphene-Based Quantum Impedance Standard
- Probing Charging and Localization in the Quantum Hall Regime by Graphene pnp Junctions
- Transport Detection of Quantum Hall Fluctuations in Graphene
- Nonequilibrium mesoscopic conductance fluctuations
- Conductance fluctuations at the quantum Hall plateau transition
- Observation of finite excess noise in the voltage-biased quantum Hall regime as a precursor for breakdown
- Quantum Interference Noise Near the Dirac Point in Graphene
Cited by in corpus (5)
- Quantum-interference origin and magnitude of 1/ noise in Dirac nodal line IrO nanowires at low temperatures
- High-field 1/f noise in hBN-encapsulated graphene transistors
- Mechanism of Universal Conductance Fluctuations
- The role of vector potential coupling in hot electron cooling power in bilayer graphene at low temperature
- Spectral analysis of universal conductance fluctuations