Nonequilibrium mesoscopic conductance fluctuations as the origin of 1/f noise in epitaxial graphene

Abstract

We investigate the 1/f noise properties of epitaxial graphene devices at low temperatures as a function of temperature, current and magnetic flux density. At low currents, an exponential decay of the 1/f noise power spectral density with increasing temperature is observed that indicates mesoscopic conductance fluctuations as the origin of 1/f noise at temperatures below 50 K. At higher currents, deviations from the typical quadratic current dependence and the exponential temperature dependence occur as a result of nonequilibrium conditions due to current heating. By applying the theory of Kubakaddi [S. S. Kubakaddi, Phys. Rev. B 79, 075417 (2009)], a model describing the 1/f noise power spectral density of nonequilibrium mesoscopic conductance fluctuations in epitaxial graphene is developed and used to determine the energy loss rate per carrier. In the regime of Shubnikov-de Haas oscillations a strong increase of 1/f noise is observed, which we attribute to an additional conductance fluctuation mechanism due to localized states in quantizing magnetic fields. When the device enters the regime of quantized Hall resistance, the 1/f noise vanishes. It reappears if the current is increased and the quantum Hall breakdown sets in.

References in corpus (16)

• Electric Field Effect in Atomically Thin Carbon Films
• Temperature dependent transport in suspended graphene
• Weak localisation magnetoresistance and valley symmetry in graphene
• Strong suppression of weak (anti)localization in graphene
• Acoustic phonon scattering limited carrier mobility in 2D extrinsic graphene
• Electronic transport in graphene: A semi-classical approach including midgap states
• Weak antilocalization in epitaxial graphene: evidence for chiral electrons
• Charge transfer between epitaxial graphene and silicon carbide
• Encapsulation and Electronic Control of Epitaxial Graphene by Photosensitive Polymers and UV light
• Phenomenological study of the electronic transport coefficients of graphene
• Anomalously strong pinning of the filling factor nu=2 in epitaxial graphene
• Transconductance fluctuations as a probe for interaction induced quantum Hall states in graphene
• Epitaxial graphene on SiC: Modification of structural and electron transport properties by substrate pretreatment
• Precision quantization of Hall resistance in transferred graphene
• Towards a Graphene-Based Quantum Impedance Standard
• Observation of finite excess noise in the voltage-biased quantum Hall regime as a precursor for breakdown

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• Spectral analysis of universal conductance fluctuations