188 citations · 294 across the 15 of their papers we have counts for
15 papers
Zero external magnetic field quantum standard of resistance at the 10-9 level
D. K. Patel, K. M. Fijalkowski, M. Kruskopf +10
The quantum anomalous Hall effect holds promise as a disruptive innovation in condensed matter physics and metrology, as it gives access to Hall resistance quantization in terms of…
Good practice guide on the graphene-based AC-QHE realization of the farad
Luca Callegaro, Stephan Bauer, Blaise Jeanneret +4
This Good Practice Guide provides information for the realization of the farad from the quantum Hall resistance in graphene devices by using digital impedance bridges. The fabricat…
Large-scale five- and seven-junction epitaxial graphene devices
Dinesh Patel, Martina Marzano, Chieh-I Liu +8
The utilization of multiple current terminals on millimeter-scale graphene p-n junction devices has enabled the measurement of many atypical, fractional multiples of the quantized…
Algorithms for determining resistances in quantum Hall annuli with p-n junctions
Chieh-I Liu, Dominick S. Scaletta, Dinesh K. Patel +4
Just a few of the promising applications of graphene Corbino pnJ devices include two-dimensional Dirac fermion microscopes, custom programmable quantized resistors, and mesoscopic…
Fabrication of quantum Hall p-n junction checkerboards
Dinesh K. Patel, Martina Marzano, Chieh-I Liu +4
Measurements of fractional multiples of the ν=2 plateau quantized Hall resistance (R_H {\approx} 12906 Ω) were enabled by the utilization of multiple current terminals on millimetr…
Quantum Hall Junction Dartboards Using Graphene Annuli
Chieh-I Liu, Dinesh K. Patel, Martina Marzano +3
The use of multiple current terminals on millimeter-scale graphene junction devices fabricated with Corbino geometries, or quantum Hall resistance dartboards, have enabled th…
Nonconventional Quantized Hall Resistances Obtained with Equilibration in Epitaxial Graphene Junctions
Albert F. Rigosi, Dinesh Patel, Martina Marzano +9
We have demonstrated the millimeter-scale fabrication of monolayer epitaxial graphene junction devices using simple ultraviolet photolithography, thereby significantly reduci…
Algorithm for constructing customized quantized resistances in graphene junctions
Albert F. Rigosi, Martina Marzano, Antonio Levy +6
An algorithm is introduced for predicting quantized resistances in graphene p-n junction devices that utilize more than a single entry and exit point for electron flow. Depending o…
Designs for programmable quantum resistance standards based on epitaxial graphene p-n junctions
Jiuning Hu, Albert F. Rigosi, Mattias Kruskopf +13
We report the fabrication and measurement of top gated epitaxial graphene p-n junctions where exfoliated hexagonal boron nitride (h-BN) is used as the gate dielectric. The four-ter…
Crystalline Formations of NbN/4H-SiC Heterostructure Interfaces
Michael B. Katz, Chieh-I Liu, Albert F. Rigosi +4
Given the importance of incorporating various superconducting materials to device fabrication or substrate development, studying the interface for possible interactions is warrante…
Confocal laser scanning microscopy: A tool for rapid optical characterization of 2D materials
Vishal Panchal, Yanfei Yang, Guangjun Cheng +9
Confocal laser scanning microscopy (CLSM) is a non-destructive, highly-efficient optical characterization method for large-area analysis of graphene on different substrates, which…
Tailoring the SiC surface - a morphology study on the epitaxial growth of graphene and its buffer layer
Mattias Kruskopf, Klaus Pierz, Davood Momeni Pakdehi +4
We investigate the growth of the graphene buffer layer and the involved step bunching behavior of the silicon carbide substrate surface using atomic force microscopy. The formation…
Nonequilibrium mesoscopic conductance fluctuations as the origin of 1/f noise in epitaxial graphene
Cay-Christian Kalmbach, Franz Josef Ahlers, Jürgen Schurr +6
We investigate the 1/f noise properties of epitaxial graphene devices at low temperatures as a function of temperature, current and magnetic flux density. At low currents, an expon…
Comeback of epitaxial graphene for electronics: large-area growth of bilayer-free graphene on SiC
Mattias Kruskopf, Davood Momeni Pakdehi, Klaus Pierz +12
We present a new fabrication method for epitaxial graphene on SiC which enables the growth of ultra-smooth defect- and bilayer-free graphene sheets with an unprecedented reproducib…
Epitaxial graphene on SiC: Modification of structural and electron transport properties by substrate pretreatment
Mattias Kruskopf, Klaus Pierz, Stefan Wundrack +8
The electrical transport properties of epitaxial graphene layers are correlated with the SiC surface morphology. In this study we show by atomic force microscopy and Raman measurem…