Comeback of epitaxial graphene for electronics: large-area growth of bilayer-free graphene on SiC

Abstract

We present a new fabrication method for epitaxial graphene on SiC which enables the growth of ultra-smooth defect- and bilayer-free graphene sheets with an unprecedented reproducibility, a necessary prerequisite for wafer-scale fabrication of high quality graphene-based electronic devices. The inherent but unfavorable formation of high SiC surface terrace steps during high temperature sublimation growth is suppressed by rapid formation of the graphene buffer layer which stabilizes the SiC surface. The enhanced nucleation is enforced by decomposition of polymer adsorbates which act as a carbon source. With most of the steps well below 0.75 nm pure monolayer graphene without bilayer inclusions is formed with lateral dimensions only limited by the size of the substrate. This makes the polymer assisted sublimation growth technique the most promising method for commercial wafer scale epitaxial graphene fabrication. The extraordinary electronic quality is evidenced by quantum resistance metrology at 4.2 K with until now unreached precision and high electron mobilities on mm scale devices.

20 pages, 6 Figures

References in corpus (12)

• Ultrathin epitaxial graphite: 2D electron gas properties and a route toward graphene-based nanoelectronics
• Quantum Resistance Standard Based on Epitaxial Graphene
• SiC Graphene Suitable For Quantum Hall Resistance Metrology
• Large area and structured epitaxial graphene produced by confinement controlled sublimation of silicon carbide
• Raman spectra of epitaxial graphene on SiC and of epitaxial graphene transferred to SiO2
• Hall Effect Mobility of Epitaxial Graphene Grown on Silicon Carbide
• Encapsulation and Electronic Control of Epitaxial Graphene by Photosensitive Polymers and UV light
• Quantum Hall resistance standards from graphene grown by chemical vapor deposition on silicon carbide
• Deformation and scattering in graphene over substrate steps
• Precision comparison of the quantum Hall effect in graphene and gallium arsenide
• Epitaxial graphene on SiC: Modification of structural and electron transport properties by substrate pretreatment
• Quantum Hall Effect and Quantum Point Contact in Bilayer-Patched Epitaxial Graphene

Cited by in corpus (30)

• Time-Resolved Momentum Microscopy with a 1 MHz High-Harmonic Extreme Ultraviolet Beamline
• Substrate induced nanoscale resistance variation in epitaxial graphene
• The graphene/n-Ge(110) interface: structure, doping, and electronic properties
• Effect of residual gas composition on epitaxial graphene growth on SiC
• Homogeneous Large-area Quasi-freestanding Monolayer and Bilayer Graphene on SiC
• Momentum microscopy of Pb-intercalated graphene on SiC: charge neutrality and electronic structure of interfacial Pb
• Tailoring the SiC surface - a morphology study on the epitaxial growth of graphene and its buffer layer
• Growth and electronic structure of graphene on semiconducting Ge(110)
• Silicon carbide stacking-order-induced doping variation in epitaxial graphene
• The ampere and the electrical units in the quantum era
• Liquid metal intercalation of epitaxial graphene: large-area gallenene layer fabrication through gallium self-propagation at ambient conditions
• Surface charge-transfer doping a quantum-confined silver monolayer beneath epitaxial graphene
• Realization of 5 h/e^2 with graphene quantum Hall resistance array
• Vertical structure of Sb-intercalated quasifreestanding graphene on SiC(0001)
• Stacking domain morphology in epitaxial graphene on silicon carbide
• Conception of an enhanced mechanism for a new Kibble balance directly traceable to the quantum SI
• Reversible Switching of the Environment-Protected Quantum Spin Hall Insulator Bismuthene at the Graphene/SiC Interface
• 3D arrangement of epitaxial graphene conformally grown on porousified crystalline SiC
• Traceably Calibrated Scanning Hall Probe Microscopy at Room Temperature
• Pb-intercalated epitaxial graphene on SiC: Full insight into band structure and orbital character of interlayer Pb, and charge transfer into graphene
• Electronic correlations in epitaxial graphene: Mott states proximitized to a relativistic electron gas
• Quasi-free-standing AA-stacked bilayer graphene induced by calcium intercalation of the graphene-silicon carbide interface
• Identifying Electronic Doorway States in the Secondary Electron Emission from Layered Materials
• Mesoscopic scale study of lateral dynamics of Sn-intercalation of the buffer layer on SiC
• Determination of the Spacing Between Hydrogen-Intercalated Quasi-Free-Standing Monolayer Graphene and 6H-SiC(0001) Using Total-Reflection High-Energy Positron Diffraction
• Charge transfer between van der Waals coupled metallic 2D layers
• Robust quantum Hall resistance standard from uniform wafer-scale epitaxial graphene on SiC
• Raman spectra and infrared intensities of graphene-like clusters in compared to epitaxial graphene on Si
• Pronounced scale-dependent charge carrier density in graphene quantum Hall devices
• Solving the Phase Problem of Diffraction: X-ray Standing Waves Imaging on Bismuthene/SiC(0001)