188 citations · 341 across the 6 of their papers we have counts for
6 papers
Homogeneous Large-area Quasi-freestanding Monolayer and Bilayer Graphene on SiC
Davood Momeni Pakdehi, Klaus Pierz, Stefan Wundrack +9
In this study, we first show that the argon flow during epitaxial graphene growth is an important parameter to control the quality of the buffer and the graphene layer. Atomic forc…
MnSi-nanostructures obtained from thin films: magnetotransport and Hall effect
D. Schroeter, N. Steinki, M. Schilling +6
We present a comparative study of the (magneto)transport properties, including Hall effect, of bulk, thin film and nanostructured MnSi. In order to set our results in relation to p…
Comeback of epitaxial graphene for electronics: large-area growth of bilayer-free graphene on SiC
Mattias Kruskopf, Davood Momeni Pakdehi, Klaus Pierz +12
We present a new fabrication method for epitaxial graphene on SiC which enables the growth of ultra-smooth defect- and bilayer-free graphene sheets with an unprecedented reproducib…
Epitaxial graphene on SiC: Modification of structural and electron transport properties by substrate pretreatment
Mattias Kruskopf, Klaus Pierz, Stefan Wundrack +8
The electrical transport properties of epitaxial graphene layers are correlated with the SiC surface morphology. In this study we show by atomic force microscopy and Raman measurem…
Versatile sputtering technology for Al2O3 gate insulators on graphene
M. Friedemann, M. Woszczyna, A. Müller +5
We report a novel fabrication method of graphene Al2O3 gate insulators based on sputtering. Electrical performance of dual-gated mono- and bilayer exfoliated graphene devices is pr…
Graphene p-n junction Arrays as Quantum-Hall Resistance Standards
Mirosław Woszczyna, Miriam Friedemann, Thorsten Dziomba +2
We demonstrate a device concept to fabricate resistance standards made of quantum Hall series arrays by using p-type and n-type graphene. The ambipolar nature of graphene allows fa…