188 citations · 341 across the 6 of their papers we have counts for
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cond-mat.mes-hall2011★ 15 cited
Versatile sputtering technology for Al2O3 gate insulators on graphene
M. Friedemann, M. Woszczyna, A. Müller +5
We report a novel fabrication method of graphene Al2O3 gate insulators based on sputtering. Electrical performance of dual-gated mono- and bilayer exfoliated graphene devices is pr…
cond-mat.mes-hall2011★ 58 cited
Graphene p-n junction Arrays as Quantum-Hall Resistance Standards
Mirosław Woszczyna, Miriam Friedemann, Thorsten Dziomba +2
We demonstrate a device concept to fabricate resistance standards made of quantum Hall series arrays by using p-type and n-type graphene. The ambipolar nature of graphene allows fa…