Graphene p-n junction Arrays as Quantum-Hall Resistance Standards
arXiv:1105.0838 · doi:10.1063/1.3608157
Abstract
We demonstrate a device concept to fabricate resistance standards made of quantum Hall series arrays by using p-type and n-type graphene. The ambipolar nature of graphene allows fabricating series quantum Hall resistors without complex multi-layer metal interconnect technology, which is required when using conventional GaAs two-dimensional electron systems. As a prerequisite for a precise resistance standard we confirm the vanishing of longitudinal resistance across a p-n junction for metrological relevant current levels in the range of a few \muA.
accepted for publication in Applied Physics Letters
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- Graphene pn-junction in a quantizing magnetic field: Conductance at intermediate disorder strength
- Equilibration of quantum hall edge states and its conductance fluctuations in graphene p-n junctions
- Programmable quantum Hall bisector: towards a novel resistance standard for quantum metrology
- Graphene - junctions in the Quantum Hall regime: numerical study of incoherent scattering effects
- Reconfigurable edge-state engineering in graphene using LaAlO/SrTiO nanostructures
- Valley detection using a graphene gradual pn junction with spin-orbit coupling: an analytical conductance calculation