activity
20002018
most citedComeback of epitaxial graphene for electronics: large-area growth of bilayer-free graphene on SiC

188 citations · 1k across the 23 of their papers we have counts for

collaborators

23 papers

cond-mat.mtrl-sci2018★ 35 cited

Homogeneous Large-area Quasi-freestanding Monolayer and Bilayer Graphene on SiC

Davood Momeni Pakdehi, Klaus Pierz, Stefan Wundrack +9

In this study, we first show that the argon flow during epitaxial graphene growth is an important parameter to control the quality of the buffer and the graphene layer. Atomic forc…

cond-mat.mes-hall2017★ 78 cited

Zero-field quantum anomalous Hall metrology as a step towards a universal quantum standard unit system

Martin Goetz, Kajetan M. Fijalkowski, Eckart Pesel +9

In the quantum anomalous Hall effect, the edge states of a ferromagnetically doped topological insulator exhibit quantized Hall resistance and dissipationless transport at zero mag…

cond-mat.mes-hall2017★ 7 cited

Direct Comparison of Fractional and Integer Quantized Hall Resistance

Franz J. Ahlers, Martin Götz, Klaus Pierz

We present precision measurements of the fractional quantized Hall effect where the quantized resistance in the fractional quantum Hall state at filling factor 1/3 was…

cond-mat.mes-hall2017★ 9 cited

Electron counting capacitance standard and quantum metrology triangle experiments at PTB

H Scherer, J Schurr, F J Ahlers

This paper summarizes the final results of the electron counting capacitance standard experiment at the Physikalisch-Technische Bundesanstalt (PTB) achieved since the publication o…

cond-mat.mes-hall2016★ 16 cited

Nonequilibrium mesoscopic conductance fluctuations as the origin of 1/f noise in epitaxial graphene

Cay-Christian Kalmbach, Franz Josef Ahlers, Jürgen Schurr +6

We investigate the 1/f noise properties of epitaxial graphene devices at low temperatures as a function of temperature, current and magnetic flux density. At low currents, an expon…

cond-mat.mtrl-sci2016★ 188 cited

Comeback of epitaxial graphene for electronics: large-area growth of bilayer-free graphene on SiC

Mattias Kruskopf, Davood Momeni Pakdehi, Klaus Pierz +12

We present a new fabrication method for epitaxial graphene on SiC which enables the growth of ultra-smooth defect- and bilayer-free graphene sheets with an unprecedented reproducib…