SiC Graphene Suitable For Quantum Hall Resistance Metrology
arXiv:0909.1193 · doi:10.1038/nnano.2009.474
Abstract
We report the first observation of the quantum Hall effect in epitaxial graphene. The result described in the submitted manuscript fills the yawning gap in the understanding of the electronic properties of this truly remarkable material and demonstrate suitability of the silicon carbide technology for manufactiring large area high quality graphene. Having found the quantum Hall effect in several devices produced on distant parts of a single large-area wafer, we can confirm that material synthesized on the Si-terminated face of SiC promises a suitable platform for the implementations of quantum resistance metrology at elevated temperatures and, in the longer term, opens bright prospects for scalable electronics based on graphene.
Submitted to Science Brevia 07 July 2009, rejected 10 July 2009 as more appropriate for a more specialized journal
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