Nonlinear Transport of Graphene in the Quantum Hall Regime
arXiv:1611.04221 · doi:10.1088/2053-1583/4/1/015003
Abstract
We have studied the breakdown of the integer quantum Hall (QH) effect with fully broken symmetry, in an ultra-high mobility graphene device sandwiched between two single crystal hexagonal boron nitride substrates. The evolution and stabilities of the QH states are studied quantitatively through the nonlinear transport with dc Hall voltage bias. The mechanism of the QH breakdown in graphene and the movement of the Fermi energy with the electrical Hall field are discussed. This is the first study in which the stabilities of fully symmetry broken QH states are probed all together. Our results raise the possibility that the v=6 states might be a better target for the quantum resistance standard.
15 pages,6 figures
References in corpus (15)
- Ultrahigh electron mobility in suspended graphene
- Boron nitride substrates for high-quality graphene electronics
- Intrinsic and Extrinsic Performance Limits of Graphene Devices on SiO2
- Room-Temperature Quantum Hall Effect in Graphene
- Charged Impurity Scattering in Graphene
- Landau Level Splitting in Graphene in High Magnetic Fields
- Multicomponent fractional quantum Hall effect in graphene
- Fast pick up technique for high quality heterostructures of bilayer graphene and hexagonal boron nitride
- Graphene integer quantum Hall effect in the ferromagnetic and paramagnetic regimes
- Composite Fermions and Broken Symmetries in Graphene
- Quantum Hall resistance standards from graphene grown by chemical vapor deposition on silicon carbide
- Quantum resistance metrology in graphene
- Recent Experimental Progress of Fractional Quantum Hall Effect: 5/2 Filling State and Graphene
- De-Pinning Transition of Bubble Phases in a High Landau Level
- Local breakdown of the quantum Hall effect in narrow single layer graphene Hall devices