Non-equilibrium breakdown of quantum Hall state in graphene

Abstract

In this report we experimentally probe the non-equilibrium breakdown of the quantum Hall state in monolayer graphene by injecting a high current density ($\sim$1A/m). The measured critical currents for dissipationless transport in the vicinity of integer filling factors show a dependence on filling factor. The breakdown can be understood in terms of inter Landau level (LL) scattering resulting from mixing of wavefunctions of different LLs. To further study the effect of transverse electric field, we measured the transverse resistance between the $\nu =2$ to $\nu =6$ plateau transition for different bias currents and observed an invariant point.

to appear in PRB Rapid

References in corpus (7)

• The electronic properties of graphene
• Room-Temperature Quantum Hall Effect in Graphene
• Carrier transport in 2D graphene layers
• Landau Level Splitting in Graphene in High Magnetic Fields
• Novel electric field effects on Landau levels in Graphene
• Quantum-Hall activation gaps in graphene
• Quantum resistance metrology in graphene

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