Role of electrical field in quantum Hall effect of graphene
arXiv:1207.4539 · doi:10.1016/j.ssc.2012.11.005
Abstract
The ballistic motion of carriers of graphene in an orthogonal electromagnetic field is investigated to explain Hall conductance of graphene under experimental conditions. With the electrical field, all electronic eigen-states have the same expectation value of the velocity operator, or classically, all carriers move in cycloids with the same average velocity. The magnitude of this velocity is just appropriate to generate the quantized Hall conductance which is in turn exactly independent of the external field. Electrical field changes each Landau level into a bundle of energies, whose overlap in large fields destroys the quantized Hall conductance. As the electrical field tends to the critical point, Landau level expansion occurs. As a result, saturation of the Hall conductance may be observed.
4 figures
References in corpus (11)
- The electronic properties of graphene
- Chiral tunneling and the Klein paradox in graphene
- Unconventional Integer Quantum Hall effect in graphene
- Andreev reflection and Klein tunneling in graphene
- Selective transmission of Dirac electrons and ballistic magnetoresistance of \textit{n-p} junctions in graphene
- Novel electric field effects on Landau levels in Graphene
- Atomic collapse, Lorentz boosts, Klein scattering, and other quantum-relativistic phenomena in graphene
- Algebraic solution of a graphene layer in a transverse electric and perpendicular magnetic fields
- Transverse field effect in graphene ribbons
- Snake States in Graphene p-n Junctions
- Landau Level Collapse in Gated Graphene Structures