Quantum Hall resistance standards from graphene grown by chemical vapor deposition on silicon carbide

Abstract

Replacing GaAs by graphene to realize more practical quantum Hall resistance standards (QHRS), accurate to within $10^{-9}$ in relative value, but operating at lower magnetic fields than 10 T, is an ongoing goal in metrology. To date, the required accuracy has been reported, only few times, in graphene grown on SiC by sublimation of Si, under higher magnetic fields. Here, we report on a device made of graphene grown by chemical vapour deposition on SiC which demonstrates such accuracies of the Hall resistance from 10 T up to 19 T at 1.4 K. This is explained by a quantum Hall effect with low dissipation, resulting from strongly localized bulk states at the magnetic length scale, over a wide magnetic field range. Our results show that graphene-based QHRS can replace their GaAs counterparts by operating in as-convenient cryomagnetic conditions, but over an extended magnetic field range. They rely on a promising hybrid and scalable growth method and a fabrication process achieving low-electron density devices.

arXiv comment12 pages, 8 figures

References in corpus (28)

• Two-Dimensional Gas of Massless Dirac Fermions in Graphene
• Experimental Observation of Quantum Hall Effect and Berry's Phase in Graphene
• Room-Temperature Quantum Hall Effect in Graphene
• Unconventional Integer Quantum Hall effect in graphene
• Quantum Resistance Standard Based on Epitaxial Graphene
• SiC Graphene Suitable For Quantum Hall Resistance Metrology
• Charge transfer between epitaxial graphene and silicon carbide
• Encapsulation and Electronic Control of Epitaxial Graphene by Photosensitive Polymers and UV light
• Anomalously strong pinning of the filling factor nu=2 in epitaxial graphene
• Electronic transport and the localization length in the quantum Hall effect
• Precision comparison of the quantum Hall effect in graphene and gallium arsenide
• Quantum resistance metrology in graphene
• Graphene, universality of the quantum Hall effect and redefinition of the SI system
• Scaling of the quantum-Hall plateau-plateau transition in graphene
• Quantum Hall effect in polycrystalline graphene: The role of grain boundaries
• Phase-space for the breakdown of the quantum Hall effect in epitaxial graphene
• Precision quantization of Hall resistance in transferred graphene
• Quantum Hall effect on centimeter scale chemical vapor deposited graphene films
• Unveiling quantum Hall transport by Efros-Shklovskii to Mott variable range hopping transition with Graphene
• Compendium for precise ac measurements of the quantum Hall resistance
• Quantum Hall effect in exfoliated graphene affected by charged impurities: metrological measurements
• Quantum Hall Effect and Quantum Point Contact in Bilayer-Patched Epitaxial Graphene
• Quantum resistance standard accuracy close to the zero-dissipation state
• Precision Quantum Hall Resistance Measurement on Epitaxial Graphene Device in Low Magnetic Field
• Quantum Hall effect in graphene with twisted bilayer stripe defects
• Anomalous dissipation mechanism and Hall quantization limit in polycrystalline graphene grown by chemical vapor deposition
• Localization length at the resistivity minima of the quantum Hall effect
• Behavior of the contacts of Quantum Hall Effect devices at high currents : an electronic thermometer

Cited by in corpus (25)

• Comeback of epitaxial graphene for electronics: large-area growth of bilayer-free graphene on SiC
• Operation of graphene quantum Hall resistance standard in a cryogen-free table-top system
• Current-driven instability of quantum anomalous Hall effect in ferromagnetic topological insulators
• Gate-tunable proximity effects in graphene on layered magnetic insulators
• Practical quantum realization of the ampere from the electron charge
• Spin-valley skyrmions in graphene at filling factor $\nu =-1$
• The ampere and the electrical units in the quantum era
• Puddle-induced resistance oscillations in the breakdown of the graphene quantum Hall effect
• Perspectives of HgTe Topological Insulators for Quantum Hall Metrology
• Zero external magnetic field quantum standard of resistance at the 10-9 level
• Epigraphene : epitaxial graphene on silicon carbide
• Cooling of chiral heat transport in the quantum Hall effect graphene
• A primary quantum current standard based on the Josephson and the quantum Hall effects
• Destroyed quantum Hall effect in graphene with [0001] tilt grain boundaries
• Quantum Hall effect in epitaxial graphene with permanent magnets
• Magnetic-field driven ambipolar quantum Hall effect in epitaxial graphene close to the charge neutrality point
• Suppressed compressibility of quantum Hall effect edge states in epitaxial graphene on SiC
• Nonlinear Transport of Graphene in the Quantum Hall Regime
• Thermoelectric properties of the Corbino disk in graphene
• Transient vortex dynamics and evolution of Bose metal from a 2D superconductor on MoS${}_2$
• A resistance bridge based on a cryogenic current comparator achieving sub-$10^{-9}$ measurement uncertainties
• Tunable signal velocity in the integer quantum Hall effect of tailored graphene
• Robust quantum Hall resistance standard from uniform wafer-scale epitaxial graphene on SiC
• HgTe quantum wells for QHE metrology under soft cryomagnetic conditions: permanent magnets and liquid ${}^{4}He$ temperatures
• Pronounced scale-dependent charge carrier density in graphene quantum Hall devices