Robust quantum Hall resistance standard from uniform wafer-scale epitaxial graphene on SiC

Abstract

We report high-precision resistance measurements on quantum Hall resistance devices fabricated from uniform epitaxial graphene grown by propane-hydrogen chemical vapor deposition on a two-inch silicon carbide substrate. Through molecular doping, we achieve a low carrier density regime ($n_{\mathrm{s}}<$ 1.5 \textperiodcentered 10${}^{11}$ cm${}^{-2}$) combined with high mobility ($\upmu \geq$ 6000 cm${}^2$ V${}^{-1}$ s${}^{-1}$) at low temperature. Accurate quantization of the Hall resistance is demonstrated at magnetic flux densities as low as 3.5 T, temperatures up to 8 K, and measurement currents up to 325 $\upmu$A, with relative measurement uncertainties of a few parts per billion. A stability diagram mapping dissipation as a function of temperature and current provides insight into optimal doping conditions that maximize the breakdown current. All measurements were carried out in a pulse-tube-based cryomagnetic system, enabling simplified and continuous operation of the quantum Hall resistance standard without liquid helium consumption.

References in corpus (16)

• Charged Impurity Scattering in Graphene
• Electronic Properties of Graphene in a Strong Magnetic Field
• SiC Graphene Suitable For Quantum Hall Resistance Metrology
• Quantum Resistance Standard Based on Epitaxial Graphene
• Comeback of epitaxial graphene for electronics: large-area growth of bilayer-free graphene on SiC
• Charge transfer between epitaxial graphene and silicon carbide
• Encapsulation and Electronic Control of Epitaxial Graphene by Photosensitive Polymers and UV light
• Quantum Hall resistance standards from graphene grown by chemical vapor deposition on silicon carbide
• Electronic transport and the localization length in the quantum Hall effect
• Uniform doping of graphene close to the charge neutrality point by polymer-assisted spontaneous assembly of molecular dopants
• Precision comparison of the quantum Hall effect in graphene and gallium arsenide
• Operation of graphene quantum Hall resistance standard in a cryogen-free table-top system
• Towards a Graphene-Based Quantum Impedance Standard
• Exceptionally accurate large graphene quantum Hall arrays for the new SI
• Puddle-induced resistance oscillations in the breakdown of the graphene quantum Hall effect
• A primary quantum current standard based on the Josephson and the quantum Hall effects