Precision comparison of the quantum Hall effect in graphene and gallium arsenide

Abstract

The half-integer quantum Hall effect in epitaxial graphene is compared with high precision to the well known integer effect in a GaAs/AlGaAs heterostructure. We find no difference between the quantised resistance values within the relative standard uncertainty of our measurement of $8.7\times 10^{-11}$. The result places new tighter limits on any possible correction terms to the simple relation $R_{\mathrm{K}}=h/e^2$, and also demonstrates that epitaxial graphene samples are suitable for application as electrical resistance standards of the highest metrological quality. We discuss the characterisation of the graphene sample used in this experiment and present the details of the cryogenic current comparator bridge and associated uncertainty budget.

References in corpus (5)

• Room-Temperature Quantum Hall Effect in Graphene
• Charge transfer between epitaxial graphene and silicon carbide
• Encapsulation and Electronic Control of Epitaxial Graphene by Photosensitive Polymers and UV light
• Anomalously strong pinning of the filling factor nu=2 in epitaxial graphene
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