Precision comparison of the quantum Hall effect in graphene and gallium arsenide

Abstract

The half-integer quantum Hall effect in epitaxial graphene is compared with high precision to the well known integer effect in a GaAs/AlGaAs heterostructure. We find no difference between the quantised resistance values within the relative standard uncertainty of our measurement of $8.7\times 10^{-11}$. The result places new tighter limits on any possible correction terms to the simple relation $R_{\mathrm{K}}=h/e^2$, and also demonstrates that epitaxial graphene samples are suitable for application as electrical resistance standards of the highest metrological quality. We discuss the characterisation of the graphene sample used in this experiment and present the details of the cryogenic current comparator bridge and associated uncertainty budget.

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• Perspectives of HgTe Topological Insulators for Quantum Hall Metrology
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• Destroyed quantum Hall effect in graphene with [0001] tilt grain boundaries
• Single-Hole Pump in Germanium
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• Confocal laser scanning microscopy: A tool for rapid optical characterization of 2D materials
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• Fabrication and Study of Large Area QHE Devices Based on Epitaxial Graphene