activity
20032015
most citedPrecision comparison of the quantum Hall effect in graphene and gallium arsenide

81 citations · 293 across the 5 of their papers we have counts for

collaborators

5 papers

physics.ins-det2015★ 4 cited

Modernizing the SI: implications of recent progress with the fundamental constants

Nick Fletcher, Richard S Davis, Michael Stock +1

Recent proposals to re-define some of the base units of the SI make use of definitions that refer to fixed numerical values of certain constants. We review these proposals in the c…

cond-mat.mes-hall2012★ 81 cited

Precision comparison of the quantum Hall effect in graphene and gallium arsenide

T. J. B. M. Janssen, J. M. Williams, N. E. Fletcher +6

The half-integer quantum Hall effect in epitaxial graphene is compared with high precision to the well known integer effect in a GaAs/AlGaAs heterostructure. We find no difference…

cond-mat.mes-hall2011★ 78 cited

Graphene, universality of the quantum Hall effect and redefinition of the SI system

T. J. B. M. Janssen, N. E. Fletcher, R. Goebel +6

The Système Internationale d'unités (SI system) is about to undergo its biggest change in half a century by redefining the units for mass and current in terms of the fundamental co…

cond-mat.mes-hall2003★ 59 cited

Quantized charge pumping through a quantum dot by surface acoustic waves

J. Ebbecke, N. E. Fletcher, T. J. B. M. Janssen +4

We present a realization of quantized charge pumping. A lateral quantum dot is defined by metallic split gates in a GaAs/AlGaAs heterostructure. A surface acoustic wave whose wavel…

cond-mat.mes-hall2003★ 71 cited

Quantized charge transport through a static quantum dot using a surface acoustic wave

N. E. Fletcher, J. Ebbecke, T. J. B. M. Janssen +4

We present a detailed study of the surface acoustic wave mediated quantized transport of electrons through a split gate device containing an impurity potential defined quantum dot…