Quantum Hall effect in graphene with twisted bilayer stripe defects

Abstract

We analyze the quantum Hall effect in single layer graphene with bilayer stripe defects. Such defects are often encountered at steps in the substrate of graphene grown on silicon carbide. We show that AB or AA stacked bilayer stripes result in large Hall conductivity fluctuations that destroy the quantum Hall plateaux. The fluctuations are a result of the coupling of edge states at opposite edges through currents traversing the stripe. Upon rotation of the second layer with respect to the continuous monolayer (a twisted-bilayer stripe defect), such currents decouple from the extended edge states and develop into long-lived discrete quasi bound states circulating around the perimeter of the stripe. Backscattering of edge modes then occurs only at precise resonant energies, and hence the quantum Hall plateaux are recovered as twist angle grows.

8 pages, 7 figures, published version

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• Anomalous dissipation mechanism and Hall quantization limit in polycrystalline graphene grown by chemical vapor deposition
• Destroyed quantum Hall effect in graphene with [0001] tilt grain boundaries
• Bilayer-induced asymmetric quantum Hall effect in epitaxial graphene
• Impurity scattering and size quantization effects in a single graphene nanoflake
• The effect of bilayer domains on electronic transport properties of epitaxial graphene on SiC