Bilayer-induced asymmetric quantum Hall effect in epitaxial graphene
arXiv:1410.2024 · doi:10.1088/0268-1242/30/5/055007
Abstract
The transport properties of epitaxial graphene on SiC(0001) at quantizing magnetic fields are investigated. Devices patterned perpendicularly to SiC terraces clearly exhibit bilayer inclusions distributed along the substrate step edges. We show that the transport properties in the quantum Hall regime are heavily affected by the presence of bilayer inclusions, and observe a significant departure from the conventional quantum Hall characteristics. A quantitative model involving enhanced inter-channel scattering mediated by the presence of bilayer inclusions is presented that successfully explains the observed symmetry properties.
References in corpus (18)
- The Raman Fingerprint of Graphene
- Room-Temperature Quantum Hall Effect in Graphene
- Spatially Resolved Raman Spectroscopy of Single- and Few-Layer Graphene
- Unconventional quantum Hall effect and Berry's phase of 2pi in bilayer graphene
- Electronic structure of epitaxial graphene layers on SiC: effect of the substrate
- Quantum Resistance Standard Based on Epitaxial Graphene
- SiC Graphene Suitable For Quantum Hall Resistance Metrology
- Raman spectra of epitaxial graphene on SiC and of epitaxial graphene transferred to SiO2
- How Graphene-like is Epitaxial Graphene? \\Quantum Oscillations and Quantum Hall Effect
- Quantum resistance metrology in graphene
- Graphene, universality of the quantum Hall effect and redefinition of the SI system
- Quantum Hall resistances of multiterminal top-gated graphene device
- Quantum Hall effect in exfoliated graphene affected by charged impurities: metrological measurements
- Quantum Hall Effect and Quantum Point Contact in Bilayer-Patched Epitaxial Graphene
- Quantum Hall effect in graphene with twisted bilayer stripe defects
- Dependence of quantum-Hall conductance on the edge-state equilibration position in a bipolar graphene sheet
- Quantum Hall Effects in Monolayer-Bilayer Graphene Planar Junctions
- Tuning of quantum interference in top-gated graphene on SiC