Tuning of quantum interference in top-gated graphene on SiC

Abstract

We report on quantum-interference measurements in top-gated Hall bars of monolayer graphene epitaxially grown on the Si face of SiC, in which the transition from negative to positive magnetoresistance was achieved varying temperature and charge density. We perform a systematic study of the quantum corrections to the magnetoresistance due to quantum interference of quasiparticles and electron-electron interaction. We analyze the contribution of the different scattering mechanisms affecting the magnetotransport in the $-2.0\times 10^{10}$ cm${}^{-2}$ to $3.75\times 10^{11}$ cm${}^{-2}$ density region and find a significant influence of the charge density on the intravalley scattering time. Furthermore, we observe a modulation of the electron-electron interaction with charge density not accounted for by present theory. Our results clarify the role of quantum transport in SiC-based devices, which will be relevant in the development of a graphene-based technology for coherent electronics.

References in corpus (6)

• The electronic properties of graphene
• Unconventional quantum Hall effect and Berry's phase of 2pi in bilayer graphene
• Spin-orbit coupling in curved graphene, fullerenes, nanotubes, and nanotube caps
• Weak localisation magnetoresistance and valley symmetry in graphene
• Weak localisation in graphene flakes
• Intervalley scattering, long-range disorder, and effective time reversal symmetry breaking in graphene

Cited by in corpus (8)

• Low-temperature quantum transport in CVD-grown single crystal graphene
• Magnetoresistance of disordered graphene: from low to high temperatures
• Measurement of Topological Berry Phase in Highly Disordered Graphene
• Bilayer-induced asymmetric quantum Hall effect in epitaxial graphene
• Quantum Interference Noise Near the Dirac Point in Graphene
• Relationship between conductance fluctuation and weak localization in graphene
• Asymmetric Electron-Hole Decoherence in Ion-Gated Epitaxial Graphene
• Morphology and magneto-transport in exfoliated graphene on ultrathin crystalline \b{eta}-Si3N4(0001)/Si(111)