Asymmetric Electron-Hole Decoherence in Ion-Gated Epitaxial Graphene
arXiv:1709.07549 · doi:10.1038/s41598-017-12425-0
Abstract
We report on asymmetric electron-hole decoherence in epitaxial graphene gated by an ionic liquid. The observed negative magnetoresistance near zero magnetic field for different gate voltages, analyzed in the framework of weak localization, gives rise to distinct electron-hole decoherence. The hole decoherence rate increases prominently with decreasing negative gate voltage while the electron decoherence rate does not exhibit any substantial gate dependence. Quantitatively, the hole decoherence rate is as large as the electron decoherence rate by a factor of two. We discuss possible microscopic origins including spin-exchange scattering consistent with our experimental observations.
References in corpus (21)
- Carrier transport in 2D graphene layers
- Weak localisation magnetoresistance and valley symmetry in graphene
- Impurity induced spin-orbit coupling in graphene
- Weak localisation in graphene flakes
- Accessing the transport properties of graphene and its multi-layers at high carrier density
- Dephasing of Electrons in Mesoscopic Metal Wires
- Charge transfer between epitaxial graphene and silicon carbide
- Anomalously strong pinning of the filling factor nu=2 in epitaxial graphene
- z/-z Symmetry of spin-orbit coupling and weak localization in graphene
- Defect-mediated spin relaxation and dephasing in graphene
- Manifestation of electron-electron interaction in the magnetoresistance of graphene
- Phase Relaxation of Electrons in Disordered Conductors
- Gate-controlled Kondo screening in graphene: Quantum criticality and electron-hole asymmetry
- Weak localization scattering lengths in epitaxial, and CVD graphene
- Localized states influence spin transport in epitaxial graphene
- Universal dephasing rate due to diluted Kondo impurities
- Phase-space for the breakdown of the quantum Hall effect in epitaxial graphene
- Anomalous temperature dependence of the dephasing time in mesoscopic Kondo wires
- The detection of Kondo effect in the resistivity of graphene: artifacts and strategies
- Influence of impurity spin dynamics on quantum transport in epitaxial graphene
- Tuning of quantum interference in top-gated graphene on SiC