Accessing the transport properties of graphene and its multi-layers at high carrier density

Abstract

We present a comparative study of high carrier density transport in mono-, bi-, and trilayer graphene using electric-double-layer transistors to continuously tune the carrier density up to values exceeding 10^{14} cm^{-2}. Whereas in monolayer the conductivity saturates, in bi- and trilayer flling of the higher energy bands is observed to cause a non-monotonic behavior of the conductivity, and a large increase in the quantum capacitance. These systematic trends not only show how the intrinsic high-density transport properties of graphene can be accessed by field-effect, but also demonstrate the robustness of ion-gated graphene, which is crucial for possible future applications.

4 figures, 4 pages

References in corpus (13)

• Electric Field Effect in Atomically Thin Carbon Films
• Two Dimensional Atomic Crystals
• Electrochemically Top Gated Graphene: Monitoring Dopants by Raman Scattering
• Gate-induced insulating state in bilayer graphene devices
• Charged Impurity Scattering in Graphene
• A self-consistent theory for graphene transport
• Observation of the Fractional Quantum Hall Effect in Graphene
• Controlling electron-phonon interactions in graphene at ultra high carrier densities
• Fractional quantum Hall effect and insulating phase of Dirac electrons in graphene
• Electronic transport in graphene: A semi-classical approach including midgap states
• Electron scattering on microscopic corrugations in graphene
• Electron transport in disordered graphene
• Transport in Bilayer Graphene: Calculations within a self-consistent Born approximation

Cited by in corpus (76)

• Two Dimensional Ising Superconductivity in Gated MoS${}_2$
• The Shear Mode of Multi-Layer Graphene
• Quantitative Determination of the Band-Gap of WS2 with Ambipolar Ionic Liquid-Gated Transistors
• Tunable Magnetism and Half-Metallicity in Hole-doped Monolayer GaSe
• Recent progress in voltage control of magnetism: Materials, mechanisms, and performance
• Electron and Hole Mobilities in Single-Layer WSe2
• High Responsivity, Large-Area Graphene/MoS2 Flexible Photodetectors
• Novel highly conductive and transparent graphene based conductors
• The Interlayer Shear Modes in Twisted Multi-layer Graphenes: Interlayer coupling, Davydov Splitting and Intensity Resonance
• Valley-dependent properties of monolayer MoSi${}_2$N${}_4$, WSi${}_2$N${}_4$ and MoSi${}_2$As${}_4$
• Ambipolar Insulator-to-Metal Transition in Black Phosphorus by Ionic-Liquid Gating
• Raman Spectroscopy of Electrochemically-Gated Graphene Transistors: Geometrical Capacitance, Electron-Phonon, Electron-Electron, and Electron-Defect Scattering
• Fast and Highly Sensitive Ionic Polymer Gated WS${}_2$-Graphene Photodetectors
• Generating extreme electric fields in 2D materials by dual ionic gating
• Accurate Gap Determination in Monolayer and Bilayer Graphene/h-BN Moire Superlattices
• Two-gap superconductivity in heavily n-doped graphene: ab initio Migdal-Eliashberg theory
• Approaching magnetic ordering in graphene materials by FeCl${}_3$ intercalation
• Modulation Doping via a 2d Atomic Crystalline Acceptor
• Multi-Valley Superconductivity In Ion-Gated MoS2 Layers
• Phonons in potassium doped graphene: the effects of electron-phonon interactions, dimensionality and ad-atom ordering
• Charge transport in ion-gated mono-, bi-, and trilayer MoS2 field effect transistors
• Graphene Transistor as a Probe for Streaming Potential
• Four band tunneling in bilayer graphene
• Graphene-based light sensing: fabrication, characterisation, physical properties and performance
• Three-dimensional porous graphene networks expand graphene-based electronic device applications
• Band filling and cross quantum capacitance in ion gated semiconducting transition metal dichalcogenide monolayers
• Electric Properties of Dirac Fermions Captured into 3D Nanoporous Graphene Networks
• Large Transport Gap Modulation in Graphene via Electric Field Controlled Reversible Hydrogenation
• Video-speed Graphene Modulator Arrays for Terahertz Imaging Applications
• Manipulating the voltage drop in graphene nanojunctions using a gate potential
• Optically and Electrically Tunable Dirac Points and Zitterbewegung in Graphene-Based Photonic Superlattices
• Hole-doping-induced half-metallic ferromagnetism in highly-air-stable PdSe2 monolayer under uniaxial stress
• Tunable Topological States in Electron-Doped HTT-Pt
• Tunable Half-metallic Magnetism in Atom-thin Holey Two-dimensional C${}_2$N Monolayer
• Gap state analysis in electric-field-induced band gap for bilayer graphene
• Tunable magnetism in ferroelectric α-In2Se3 by hole-doping
• Strain-engineering of twist-angle in graphene/hBN superlattice devices
• Fully spin-polarized nodal loop semimetals in alkaline-metal monochalcogenide monolayers
• Ionic Gate Spectroscopy of 2D Semiconductors
• Disorder From the Bulk Ionic Liquid in Electric Double Layer Transistors
• Dirac Fermion kinetics in three-dimensionally curved graphene
• Temperature Dependence of Electric Transport in Few-layer Graphene under Large Charge Doping Induced by Electrochemical Gating
• The ultra-low-frequency shear modes of 2-4 layer graphenes observed in their scroll structures at edges
• Multiband Transport in Bilayer Graphene at High Carrier Densities
• Magnetic and electronic phase crossovers in graphene nanoflakes
• Weak Localization in Electric-Double-Layer Gated Few-layer Graphene
• Strong dopant dependence of electric transport in ion-gated MoS2
• Uniaxial stress controlled anisotropic Rashba effects and carriers-based currents in BiTeI monolayer semiconductor
• Large Fermi energy modulation in graphene transistors with high-pressure O2-annealed Y2O3 topgate insulators
• High field response of gated graphene at THz frequencies
• Lithium-ion conducting glass ceramics for electrostatic gating
• Transport properties of bilayer graphene in a strong in-plane magnetic field
• The Role of Oxygen in Ionic Liquid Gating on 2D Cr2Ge2Te6: a Non-Oxide Material
• Controlling spoof plasmons in a metal grating using graphene surface plasmons
• Chern insulators without band inversion in MoS2 monolayers with 3d adatoms
• Carrier mobility and scattering lifetime in electric double-layer gated few-layer graphene
• Mapping multi-valley Lifshitz transitions induced by field-effect doping in strained MoS2 nanolayers
• Lithium-ion-based solid electrolyte tuning of the carrier density in graphene
• Application of sodium-ion-based solid electrolyte in electrostatic tuning of carrier density in graphene
• Inhibiting Klein tunneling in graphene p-n junction without an external magnetic field
• Transport properties of multilayer graphene
• Gate-controlled neuromorphic functional transition in an electrochemical graphene transistor
• Evaluation of Disorder Introduced by Electrolyte Gating through Transport Measurements in Graphene
• Orientation-dependent electric transport and band filling in hole co-doped epitaxial diamond films
• Two-dimensional hole transport in ion-gated diamond surfaces: A brief review
• Infrared study of carrier scattering mechanism in ion-gated graphene
• Competition between phonon mediated superconductivity and carriers localization in field-effect doped molybdenum dichalcogenides
• Strong band-filling-dependence of the scattering lifetime in gated MoS2 nanolayers induced by the opening of intervalley scattering channels
• Tetragonal Mexican-Hat Dispersion and Switchable Half-Metal State with Multiple Anisotropic Weyl Fermions in Penta-Graphene
• Charge doping induced phase transitions in hydrogenated and fluorinated graphene
• Optical Phonon Anomaly in Bilayer Graphene with Ultrahigh Carrier Densities
• Mass inversion at the Lifshitz transition in monolayer graphene by diffusive, high-density, on-chip, doping
• Edge-Insensitive Magnetism and Half Metallicity in Graphene Nanoribbons
• Asymmetric Electron-Hole Decoherence in Ion-Gated Epitaxial Graphene
• Large negative transconductance in multilayer graphene: The role of intersubband scattering
• Theory of cross quantum capacitance