The Role of Oxygen in Ionic Liquid Gating on 2D Cr2Ge2Te6: a Non-Oxide Material
arXiv:1712.08281 · doi:10.1021/acsami.7b14795
Abstract
Ionic liquid gating can markedly modulate the materials' carrier density so as to induce metallization, superconductivity, and quantum phase transitions. One of the main issues is whether the mechanism of ionic liquid gating is an electrostatic field effect or an electrochemical effect, especially for oxide materials. Recent observation of the suppression of the ionic liquid gate-induced metallization in the presence of oxygen for oxide materials suggests the electrochemical effect. However, in more general scenarios, the role of oxygen in ionic liquid gating effect is still unclear. Here, we perform the ionic liquid gating experiments on a non-oxide material: two-dimensional ferromagnetic Cr2Ge2Te6. Our results demonstrate that despite the large increase of the gate leakage current in the presence of oxygen, the oxygen does not affect the ionic liquid gating effect (< 5 % difference), which suggests the electrostatic field effect as the mechanism on non-oxide materials. Moreover, our results show that the ionic liquid gating is more effective on the modulation of the channel resistances compared to the back gating across the 300 nm thick SiO2.
arXiv comment17 pages, 6 figure. To appear in ACS Applied Materials & Interfaces
References in corpus (12)
- Two Dimensional Atomic Crystals
- Black phosphorus field-effect transistors
- Phosphorene: A New 2D Material with High Carrier Mobility
- Discovery of intrinsic ferromagnetism in 2D van der Waals crystals
- Gate-tunable Phase Transitions in 1T-TaS
- Superconductivity protected by spin-valley locking in ion-gated MoS2
- Controlling many-body states by the electric-field effect in a two-dimensional material
- Accessing the transport properties of graphene and its multi-layers at high carrier density
- Electric Field Effect in Multilayer Cr2Ge2Te6: a Ferromagnetic Two-Dimensional Material
- Electrolyte gate-controlled Kondo effect in SrTiO3
- Magnetic anisotropy of the single-crystalline ferromagnetic insulator Cr2Ge2Te6
- A high-mobility electronic system at an electrolyte-gated oxide surface
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