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20 papers
Continuous Electrical Manipulation of Magnetic Anisotropy and Spin Flopping in van der Waals Ferromagnetic Devices
Ming Tang, Junwei Huang, Feng Qin +19
Controlling the magnetic anisotropy of ferromagnetic materials plays a key role in magnetic switching devices and spintronic applications. Examples of spin-orbit torque devices wit…
Unconventional Excitonic States with Phonon Sidebands in Layered Silicon Diphosphide
Ling Zhou, Junwei Huang, Lukas Windgaetter +16
Many-body interactions between quasiparticles (electrons, excitons, and phonons) have led to the emergence of new complex correlated states and are at the core of condensed matter…
Large magnetoresistance observed in α-Sn/InSb heterostructures
Yuanfeng Ding, Huanhuan Song, Junwei Huang +7
In this study, we report the epitaxial growth of a series of α-Sn films on InSb substrate by molecular beam epitaxy (MBE) with thickness varying from 10 nm to 400 nm. High qualitie…
Observation of topological electronic structure in quasi-1D superconductor TaSe3
Cheng Chen, Aiji Liang, Shuai Liu +21
Topological superconductors (TSCs), with the capability to host Majorana bound states that can lead to non-Abelian statistics and application in quantum computation, have been one…
Emergent electric field control of phase transformation in oxide superlattices
Di Yi, Yujia Wang, Olaf M. J. van 't Erve +13
Electric fields can transform materials with respect to their structure and properties, enabling various applications ranging from batteries to spintronics. Recently electrolytic g…
Multiple Superconducting Transitions in α-Sn Films Grown by Molecular Beam Epitaxy
Yuanfeng Ding, Huanhuan Song, Jinshan Yao +4
Gray tin, also known as α-Sn, has been attracting research interest recent years due to its topological nontrivial properties predicted theoretically. The Dirac linear band dispers…
The density and disorder tuned superconductor-metal transition in two dimensions
Zhuoyu Chen, Adrian G. Swartz, Hyeok Yoon +8
Quantum ground states which arise at atomically controlled oxide interfaces provide an opportunity to address key questions in condensed matter physics, including the nature of two…
Dual-Gate Modulation of Carrier Density and Disorder in an Oxide Two-Dimensional Electron System
Zhuoyu Chen, Hongtao Yuan, Yanwu Xie +5
Carrier density and disorder are two crucial parameters that control the properties of correlated two-dimensional electron systems. In order to disentangle their individual contrib…
Gate-Induced Interfacial Superconductivity in 1T-SnSe2
Junwen Zeng, Erfu Liu, Yajun Fu +16
Layered metal chalcogenide materials provide a versatile platform to investigate emergent phenomena and two-dimensional (2D) superconductivity at/near the atomically thin limit. In…
Ultrafast, highly-sensitive infrared photodetectors based on two-dimensional oxyselenide crystals
Jianbo Yin, Zhenjun Tan, Hao Hong +10
Infrared detection and sensing is deeply embedded in modern technology and human society and its development has always been benefitting from the discovery of new photoelectric res…
Gated Tuned Superconductivity and Phonon Softening in Mono- and Bilayer MoS
Yajun Fu, Erfu Liu, Hongtao Yuan +16
Superconductors at the atomic two-dimensional (2D) limit are the focus of an enduring fascination in the condensed matter community. This is because, with reduced dimensions, the e…
High responsivity phototransistors based on few-layer ReS2 for weak signal detection
Erfu Liu, Mingsheng Long, Junwen Zeng +18
Two-dimensional transition metal dichalcogenides are emerging with tremendous potential in many optoelectronic applications due to their strong light-matter interactions. To fully…
Direct Imaging of Nanoscale Conductance Evolution in Ion-Gel-Gated Oxide Transistors
Yuan Ren, Hongtao Yuan, Xiaoyu Wu +5
Electrostatic modification of functional materials by electrolytic gating has demonstrated a remarkably wide range of density modulation, a condition crucial for developing novel e…
Integrated Digital Inverters Based on Two-dimensional Anisotropic ReS2 Field-effect Transistors
Erfu Liu, Yajun Fu, Yaojia Wang +20
Semiconducting two-dimensional (2D) transition metal dichalcogenides (TMDs) are emerging as top candidates for post-silicon electronics. While most of 2D TMDs exhibit isotropic beh…
Raman vibrational spectra of bulk to monolayer ReS2 with lower symmetry
Yanqing Feng, Wei Zhou, Yaojia Wang +10
Lattice structure and symmetry of two-dimensional (2D) layered materials are of key importance to their fundamental mechanical, thermal, electronic and optical properties. Raman sp…
Electrically Tunable Optical Absorption in a Graphene-based Salisbury Screen
Vrinda Thareja, Juhyung Kang, Hongtao Yuan +4
We demonstrate a graphene-based Salisbury screen consisting of a single layer of graphene placed in close proximity to a gold back reflector. The light absorption in the screen can…
Broadband Linear-Dichroic Photodetector in a Black Phosphorus Vertical p-n Junction
Hongtao Yuan, Xiaoge Liu, Farzaneh Afshinmanesh +12
The ability to detect light over a broad spectral range is central for practical optoelectronic applications, and has been successfully demonstrated with photodetectors of two-dime…
Generation and Electric Control of Spin-Coupled Valley Current in WSe2
Hongtao Yuan, Xinqiang Wang, Biao Lian +8
The valley degree of freedom in layered transition-metal dichalcogenides (MX2) provides the opportunity to extend functionalities of novel spintronics and valleytronics devices. Du…
Electron carrier-mediated room temperature ferromagnetism in anatase (Ti,Co)O2
Tomoteru Fukumura, Yoshinori Yamada, Kazunori Ueno +7
Since the discovery of room temperature ferromagnetism in (Ti,Co)O2, the mechanism has been under discussion for a decade. Particularly, the central concern has been whether or not…
Accessing the transport properties of graphene and its multi-layers at high carrier density
J. T. Ye, M. F. Craciun, M. Koshino +6
We present a comparative study of high carrier density transport in mono-, bi-, and trilayer graphene using electric-double-layer transistors to continuously tune the carrier densi…