Raman vibrational spectra of bulk to monolayer ReS2 with lower symmetry

Abstract

Lattice structure and symmetry of two-dimensional (2D) layered materials are of key importance to their fundamental mechanical, thermal, electronic and optical properties. Raman spectroscopy, as a convenient and nondestructive tool, however has its limitations on identifying all symmetry allowing Raman modes and determining the corresponding crystal structure of 2D layered materials with high symmetry like graphene and MoS2. Due to lower structural symmetry and extraordinary weak interlayer coupling of ReS2, we successfully identified all 18 first-order Raman active modes for bulk and monolayer ReS2. Without van der Waals (vdW) correction, our local density approximation (LDA) calculations successfully reproduce all the Raman modes. Our calculations also suggest no surface reconstruction effect and the absence of low frequency rigid-layer Raman modes below 100 cm-1. Combining with Raman and LDA thus provides a general approach for studying the vibrational and structural properties of 2D layered materials with lower symmetry.

accepted by Physical Review B; 23 pages, 3 figures, 4 tables

References in corpus (7)

• The electronic properties of graphene
• The Raman Fingerprint of Graphene
• Two Dimensional Atomic Crystals
• Anomalous Lattice Vibrations of Single and Few-Layer MoS2
• Integrated Digital Inverters Based on Two-dimensional Anisotropic ReS2 Field-effect Transistors
• Raman spectroscopy of the interlayer shear mode in few-layer MoS2 flakes
• Observation of out-of-plane vibrations in few-layer graphene

Cited by in corpus (23)

• Integrated Digital Inverters Based on Two-dimensional Anisotropic ReS2 Field-effect Transistors
• Splitting of interlayer shear modes and photon energy dependent anisotropic Raman response in $N$-layer ReSe${}_2$ and ReS${}_2$
• Coupling and stacking order of ReS2 atomic layers revealed by ultralow-frequency Raman spectroscopy
• Polytypism and Unexpected Strong Interlayer Coupling of two-Dimensional Layered ReS2
• Disorder engineering and conductivity dome in ReS2 with electrolyte gating
• Complete determination of crystallographic orientation of ReX2 (X=S, Se) by polarized Raman spectroscopy
• Pressure-induced metallization and superconducting phase in ReS2
• Observation of anisotropic interlayer Raman modes in few-layer ReS2
• Strain Mapping In Single-Layer 2D Crystals Via Raman Activity
• Pressure dependence of direct optical transitions in ReS2 and ReSe2
• Cleavage Tendency of Anisotropic Two Dimensional Materials: ReX2 (X=S, Se) and WTe2
• Photodetecting and Light-Emitting Devices Based on Two Dimensional Materials
• Strain engineering and photocatalytic application of single-layer ReS${}_2$
• Dominating Interlayer Resonant Energy Transfer in Type-II 2D Heterostructure
• Non equilibrium anisotropic excitons in atomically thin ReS${}_2$
• Anisotropic Raman Scattering and Mobility in Monolayer 1Td-ReS2 Controlled by Strain Engineering
• Rigid-layer Raman-active modes in $N$-layer Transition Metal Dichalcogenides: interlayer force constants and hyperspectral Raman imaging
• Raman Study of Layered Breathing Kagome Lattice Semiconductor Nb3Cl8
• Vibrational and dielectric properties of monolayer transition metal dichalcogenides
• Temperature effect on lattice and electronic structures of WTe${}_2$ from first-principles study
• Doping controlled Fano resonance in bilayer 1T${}^{\prime }$-ReS${}_2$: Raman experiments and first-principles theoretical analysis
• Growth of epitaxial ReS2 thin film by pulsed laser deposition
• Zero-Threshold PT-Symmetric Polariton-Raman Laser