Non equilibrium anisotropic excitons in atomically thin ReS
arXiv:1811.03461 · doi:10.1088/2053-1583/aae9b9
Abstract
We present a systematic investigation of the electronic properties of bulk and few layer ReS van der Waals crystals using low temperature optical spectroscopy. Weak photoluminescence emission is observed from two non-degenerate band edge excitonic transitions separated by 20 meV. The comparable emission intensity of both excitonic transitions is incompatible with a fully thermalized (Boltzmann) distribution of excitons, indicating the hot nature of the emission. While DFT calculations predict bilayer ReS to have a direct fundamental band gap, our optical data suggests that the fundamental gap is indirect in all cases.
References in corpus (10)
- Valley polarization in MoS2 monolayers by optical pumping
- Tightly bound excitons in monolayer WSe2
- Plasmons and screening in monolayer and multilayer black phosphorus
- Exciton Radiative Lifetime in Transition Metal Dichalcogenide Monolayers
- Fine Structure and Lifetime of Dark Excitons in Transition Metal Dichalcogenide Monolayers
- Exciton and trion dynamics in atomically thin MoSe2 and WSe2: effect of localization
- Polytypism and Unexpected Strong Interlayer Coupling of two-Dimensional Layered ReS2
- Disorder engineering and conductivity dome in ReS2 with electrolyte gating
- Direct observation of the band gap transition in atomically thin ReS
- Electronic bandstructure of ReS2 by high resolution angle resolved photoemission spectroscopy