781 citations · 1.1k across the 5 of their papers we have counts for
5 papers
Valley Polarization by Spin Injection in a Light-Emitting van der Waals Heterojunction
Oriol Lopez Sanchez, Dmitry Ovchinnikov, Shikhar Misra +2
The band structure of transition metal dichalcogenides (TMDCs) with valence band edges at different locations in the momentum space could be harnessed to build devices that operate…
Disorder engineering and conductivity dome in ReS2 with electrolyte gating
Dmitry Ovchinnikov, Fernando Gargiulo, Adrien Allain +5
Atomically thin rhenium disulphide (ReS2) is a member of the transition metal dichalcogenide (TMDC) family of materials characterized by weak interlayer coupling and a distorted 1T…
Electroabsorption in MoS
Daniele Vella, Dmitry Ovchinnikov, Nicola Martino +8
To translate electrical into optical signals one uses the modulation of either the refractive index or the absorbance of a material by an electric field. Contemporary electroabsorp…
Electrical Transport Properties of Single-Layer WS2
Dmitry Ovchinnikov, Adrien Allain, Ying-Sheng Huang +2
We report on the fabrication of field-effect transistors based on single and bilayers of the semiconductor WS2 and the investigation of their electronic transport properties. We fi…
Large-area Epitaxial Monolayer MoS2
Dumitru Dumcenco, Dmitry Ovchinnikov, Kolyo Marinov +7
Two-dimensional semiconductors such as MoS2 are an emerging material family with wide-ranging potential applications in electronics, optoelectronics and energy harvesting. Large-ar…