Anisotropic Raman Scattering and Mobility in Monolayer 1Td-ReS2 Controlled by Strain Engineering
arXiv:1611.04882 · doi:10.1016/j.apsusc.2017.01.305
Abstract
Regulation of electronic structure and mobility cut-on rate in two-dimensional transition metal dichalcogenides (TMDs) has attracted much attention because of its potential in electronic device design. The anisotropic Raman scattering and mobility cut-on rate of monolayer unique distorted-1T(1Td) ReS2 with external strain are determined theoretically based on the density function theory. The angle-dependent Raman spectrum of Ag-like, Eg-like and Cp models are used to discriminate and analysis structural anisotropy; the strain is exploited to adjust the structural symmetry and electronic structure of ReS2 so as to enhance mobility cut-on rate to almost 6 times of the original value. Our results suggest the use of the strain engineering in high-quality semiconductor switch device.
arXiv comment16 pages with 3 figs
References in corpus (9)
- Atomically thin MoS2: A new direct-gap semiconductor
- Two Dimensional Atomic Crystals
- High-mobility transport anisotropy and linear dichroism in few-layer black phosphorus
- Rediscovering Black Phosphorus: A Unique Anisotropic 2D Material for Optoelectronics and Electronics
- Fluorographene: Two Dimensional Counterpart of Teflon
- Integrated Digital Inverters Based on Two-dimensional Anisotropic ReS2 Field-effect Transistors
- Ab-Initio Simulations of Deformation Potentials and Electron Mobility in Chemically Modified Graphene and two-dimensional hexagonal Boron-Nitride
- Raman vibrational spectra of bulk to monolayer ReS2 with lower symmetry
- Quasiparticle Band Gaps, Excitonic Effects, and Anisotropic Optical Properties of Monolayer Distorted 1-T Diamond-chain Structures