Observation of anisotropic interlayer Raman modes in few-layer ReS2
arXiv:1511.02645 · doi:10.1002/pssr.201510412
Abstract
ReS has recently emerged as a new member in the rapidly growing family of two-dimensional materials. Unlike MoS or WSe, the optical and electrical properties of ReS are not isotropic due to the reduced symmetry of the crystal. Here, we present layer-dependent Raman measurements of ReS samples ranging from monolayers to ten layers in the ultralow frequency regime. We observe layer breathing and shear modes which allow for easy assignment of the number of layers. Polarization-dependent measurements give further insight into the crystal structure and reveal an energetic shift of the shear mode which stems from the in-plane anisotropy of the shear modulus in this material.
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- In-plane anisotropy in biaxial ReS2 crystals probed by nano-optical imaging of waveguide modes
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- Air tightness of hBN encapsulation and its impact on Raman spectroscopy of van der Waals materials
- Two-dimensional ReS2: Solution to the Unresolved Queries on Its Structure and Inter-layer Coupling Leading to Potential Optical Applications
- Light-Assisted and Gate-Tunable Oxygen Gas Sensor based on Rhenium Disulfide (ReS2) Field-Effect Transistors