paper

Observation of anisotropic interlayer Raman modes in few-layer ReS2

arXiv:1511.02645 · doi:10.1002/pssr.201510412

Abstract

ReS has recently emerged as a new member in the rapidly growing family of two-dimensional materials. Unlike MoS or WSe, the optical and electrical properties of ReS are not isotropic due to the reduced symmetry of the crystal. Here, we present layer-dependent Raman measurements of ReS samples ranging from monolayers to ten layers in the ultralow frequency regime. We observe layer breathing and shear modes which allow for easy assignment of the number of layers. Polarization-dependent measurements give further insight into the crystal structure and reveal an energetic shift of the shear mode which stems from the in-plane anisotropy of the shear modulus in this material.

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