Phonon and Raman scattering of two-dimensional transition metal dichalcogenides from monolayer, multilayer to bulk material

Abstract

Two-dimensional (2D) transition metal dichalcogenide (TMD) nanosheets exhibit remarkable electronic and optical properties. The 2D features, sizable bandgaps, and recent advances in the synthesis, characterization, and device fabrication of the representative MoS${}_2$, WS${}_2$, WSe${}_2$, and MoSe${}_2$ TMDs make TMDs very attractive in nanoelectronics and optoelectronics. Similar to graphite and graphene, the atoms within each layer in 2D TMDs are joined together by covalent bonds, while van der Waals interactions keep the layers together. This makes the physical and chemical properties of 2D TMDs layer dependent. In this review, we discuss the basic lattice vibrations of monolayer, multilayer, and bulk TMDs, including high-frequency optical phonons, interlayer shear and layer breathing phonons, the Raman selection rule, layer-number evolution of phonons, multiple phonon replica, and phonons at the edge of the Brillouin zone. The extensive capabilities of Raman spectroscopy in investigating the properties of TMDs are discussed, such as interlayer coupling, spin--orbit splitting, and external perturbations. The interlayer vibrational modes are used in rapid and substrate-free characterization of the layer number of multilayer TMDs and in probing interface coupling in TMD heterostructures. The success of Raman spectroscopy in investigating TMD nanosheets paves the way for experiments on other 2D crystals and related van der Waals heterostructures.

30 pages, 23 figures

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• Autonomous synthesis of thin film materials with pulsed laser deposition enabled by in situ spectroscopy and automation
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• Visualization of defect-induced excitonic properties of the edges and grain boundaries in synthesized monolayer molybdenum disulfide
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• Experimental demonstration of the suppression of optical phonon splitting in 2D materials by Raman spectroscopy
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• Raman spectrum of 1T'-WTe2 under tensile strain: A first-principles prediction
• Rapid multiplex ultrafast nonlinear microscopy for material characterization
• Resonant Raman Scattering of Few Layers CrBr${}_3$
• Suppression of the Shear Raman Mode in Defective Bilayer MoS2
• Vertical Heterostructures between Transition-Metal Dichalcogenides -- A Theoretical Analysis of the NbS${}_2$/WSe${}_2$ junction
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• Curvature-enhanced localised emission from dark states in wrinkled monolayer WSe2 at room temperature
• Raman scattering excitation in monolayers of semiconducting transition metal dichalcogenides
• Terahertz emission from transient currents and coherent phonons in layered MoSe${}_2$ and WSe${}_2$
• Decoding the DC and optical conductivities of disordered MoS${}_2$ films: an inverse problem
• Nanoparticle Stressor-Induced Single-photon Sources in Monolayer WS${}_2$ Emitting into a Narrowband Visible Spectral Range
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• Macroscopic electro-optical modulation of solution-processed molybdenum disulfide
• Defect Passivation and Förster-Type Energy Exchange in H2Pc-TMD Organic-Inorganic Heterostructures
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