Layer Dependence of Stacking Order in Nonencapsulated Few-layer CrI3
arXiv:1907.08886 · doi:10.1007/s40843-019-1214-y
Abstract
Long-range magnetic orders in atomically thin ferromagnetic CrI3 give rise to new fascinating physics and application perspectives. The physical properties of two-dimensional (2D) ferromagnetism CrI3 are significantly influenced by interlayer spacing and stacking order, which are sensitive to the hydrostatic pressure and external environments. However, there remains debate on the stacking order at low temperature. Here, we study the interlayer coupling and stacking order of non-encapsulated 2-5 layer and bulk CrI3 at 10 K by Raman spectroscopy; demonstrate a rhombohedral stacking in both antiferromagnetic and ferromagnetic CrI3. The opposite helicity dependence of Ag and Eg modes arising from phonon symmetry further validate the rhombohedral stacking. An anomalous temperature-dependent behavior is observed due to spin-phonon coupling below 60 K. Our work provides insights into the interlayer coupling and stacking orders of 2D ferromagnetic materials.
References in corpus (24)
- Layer-dependent Ferromagnetism in a van der Waals Crystal down to the Monolayer Limit
- Discovery of intrinsic ferromagnetism in 2D van der Waals crystals
- Gate-tunable Room-temperature Ferromagnetism in Two-dimensional FeGeTe
- Two-dimensional materials from high-throughput computational exfoliation of experimentally known compounds
- Electrical Control of 2D Magnetism in Bilayer CrI3
- Phonon and Raman scattering of two-dimensional transition metal dichalcogenides from monolayer, multilayer to bulk material
- Giant Tunneling Magnetoresistance in Spin-Filter van der Waals Heterostructures
- Controlling magnetism in 2D CrI3 by electrostatic doping
- Ising-Type Magnetic Ordering in Atomically Thin FePS3
- Probing magnetism in 2D van der Waals crystalline insulators via electron tunneling
- Lattice dynamics in mono- and few-layer sheets of WS2 and WSe2
- Electric-field switching of two-dimensional van der Waals magnets
- Stacking-Dependent Magnetism in Bilayer CrI
- Interlayer breathing and shear modes in few-trilayer MoS2 and WSe2
- Very Large Tunneling Magnetoresistance in Layered Magnetic Semiconductor CrI
- Electric-field control of magnetism in few-layered van der Waals magnet
- Switching 2D Magnetic States via Pressure Tuning of Layer Stacking
- Pressure-controlled interlayer magnetism in atomically thin CrI3
- Giant and nonreciprocal second harmonic generation from layered antiferromagnetism in bilayer CrI3
- Giant enhancement of interlayer exchange in an ultrathin 2D magnet
- Raman fingerprint of two terahertz spin wave branches in a two-dimensional honeycomb Ising ferromagnet
- Distinct spin-lattice and spin-phonon interactions in monolayer magnetic CrI
- Lattice dynamics and phase transition in CrI single crystals
- Phonon anomalies in FeS
Cited by in corpus (8)
- Magnetic order induced polarization anomaly of Raman scattering in 2D magnet CrI
- Observation of nonreciprocal magneto-optical scattering in nonencapsulated few-layered CrI3
- Magnetoelectric Response of Antiferromagnetic Van der Waals Bilayers
- Emergent magnetic states due to stacking and strain in the van der Waals magnetic trilayer CrI3
- Interlayer magnetic interactions in -twisted bilayer CrI
- Growth of high-quality CrI3 single crystals and engineering of its magnetic properties via V and Mn doping
- Large cross-polarized Raman signal in CrI: A first-principles study
- Observation of intrinsic crystal phase in bare CrI3 ferromagnetism