Interlayer magnetic interactions in -twisted bilayer CrI
arXiv:2111.04998 · doi:10.1063/5.0075060
Abstract
The interlayer magnetic interaction in bilayer CrI plays a crucial role for its device applications. In this work, we studied the interlayer magnetic interaction in -twisted bilayer CrI using first-principles calculations. Our calculations show that the interlayer coupling can be ferromagnetic or antiferromagnetic depending crucially on lateral shift. The strongest antiferromagnetic interlayer interaction appears in the -stacking. The magnetic force theory calculations demonstrate that such an antiferromagnetic interaction is dominanted by the - channel. Particularly, the interlayer antiferromagnetic interaction is very sensitive to external pressure. This highly tunable interlayer interaction makes -twisted bilayer CrI a potential building block for magnetic field effect transistors and pressure sensors.
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- Activating magnetoelectric optical properties by twisting antiferromagnetic bilayers
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