Interface coupling in twisted multilayer graphene by resonant Raman spectroscopy of layer breathing modes
arXiv:1505.00095 · doi:10.1021/acsnano.5b02502
Abstract
Raman spectroscopy is the prime non-destructive characterization tool for graphene and related layered materials. The shear (C) and layer breathing modes (LBMs) are due to relative motions of the planes, either perpendicular or parallel to their normal. This allows one to directly probe the interlayer interactions in multilayer samples. Graphene and other two-dimensional (2d) crystals can be combined to form various hybrids and heterostructures, creating materials on demand with properties determined by the interlayer interaction. This is the case even for a single material, where multilayer stacks with different relative orientation have different optical and electronic properties. In twisted multilayer graphene samples there is a significant enhancement of the C modes due to resonance with new optically allowed electronic transitions, determined by the relative orientation of the layers. Here we show that this applies also to the LBMs, that can be now directly measured at room temperature. We find that twisting does not affect LBMs, quite different from the case of the C modes. This implies that the periodicity mismatch between two twisted layers mostly affects shear interactions. Our work shows that Raman spectroscopy is an ideal tool to uncover the interface coupling of 2d hybrids and heterostructures.
ACS Nano, 2015, 9(7), 7440-7449
References in corpus (12)
- Quantum ESPRESSO: a modular and open-source software project for quantum simulations of materials
- The Raman Fingerprint of Graphene
- Two Dimensional Atomic Crystals
- Boron nitride substrates for high-quality graphene electronics
- Vertical Field Effect Transistor based on Graphene-WS2 Heterostructures for flexible and transparent electronics
- Phonon and Raman scattering of two-dimensional transition metal dichalcogenides from monolayer, multilayer to bulk material
- Cross-sectional imaging of individual layers and buried interfaces of graphene-based heterostructures and superlattices
- Evolution of Interlayer Coupling in Twisted MoS2 Bilayers
- Rayleigh Imaging of Graphene and Graphene Layers
- Impact of the electron-electron correlation on phonon dispersions: failure of LDA and GGA functionals in graphene and graphite
- Observation of out-of-plane vibrations in few-layer graphene
- Temperature-activated layer-breathing vibrations in few-layer graphene
Cited by in corpus (28)
- Large-scale quantum-emitter arrays in atomically thin semiconductors
- Stacking tunable interlayer magnetism in bilayer CrI3
- Interlayer electronic hybridization leads to exceptional thickness-dependent vibrational properties in few-layer black phosphorus
- Layer- and doping-tunable long range ferromagnetic order-ing in two-dimensional CrS2
- Polytypism and Unexpected Strong Interlayer Coupling of two-Dimensional Layered ReS2
- InSe: a two-dimensional material with strong interlayer coupling
- Light matter interaction in transition metal dichalcogenides and their heterostructures
- Strain-shear coupling in bilayer MoS2
- Raman fingerprints of atomically precise graphene nanoribbons
- Physical origin of Davydov splitting and resonant Raman spectroscopy of Davydov components in multilayer MoTe2
- Electronic and Vibrational Properties of PbI 2 : From Bulk to Monolayer
- Stacking-Dependent Interlayer Phonons in 3R and 2H MoS
- Large-scale mapping of moiré superlattices by Raman imaging of interlayer breathing mode and moiré phonons
- Coherent anti-Stokes Raman Spectroscopy of single and multi-layer graphene
- Inversion Domain Boundary Induced Stacking and Bandstructure Diversity in Bilayer MoSe2
- Strain Mapping In Single-Layer 2D Crystals Via Raman Activity
- Interlayer bond polarizability model for stacking-dependent low-frequency Raman scattering in layered materials
- Polytypism in Few-Layer Gallium Selenide
- Shear and breathing modes of layered materials
- Interlayer Coupling in Two-Dimensional Semiconductor Materials
- Determining layer number of two dimensional flakes of transition-metal dichalcogenides by the Raman intensity from substrate
- Raman spectroscopic characterization of stacking configuration and interlayer coupling of twisted multilayer graphene grown by chemical vapor deposition
- The Effect of Humidity on the Interlayer Interaction of Bi-layer Graphene
- Rigid-layer Raman-active modes in -layer Transition Metal Dichalcogenides: interlayer force constants and hyperspectral Raman imaging
- Tunable magnetism in bilayer transition metal dichalcogenides
- Plasmonic nanocavity-enabled universal detection of layer-breathing vibrations in two-dimensional materials
- Perpendicular electronic transport and moiré-induced resonance in twisted interfaces of three-dimensional graphite
- Linear Dichroism Conversion in Quasi One-Dimensional Perovskite Chalcogenide