Raman spectroscopy of the interlayer shear mode in few-layer MoS2 flakes
arXiv:1205.1916 · doi:10.1063/1.4751266
Abstract
Single- and few-layer MoS2 has recently gained attention as an interesting new material system for opto-electronics. Here, we report on scanning Raman measurements on few-layer MoS2 flakes prepared by exfoliation. We observe a Raman mode corresponding to a rigid shearing oscillation of adjacent layers. This mode appears at very low Raman shifts between 20 and 30 relative wavenumbers. Its position strongly depends on the number of layers, which we independently determine using AFM measurements and investigation of the other characteristic Raman modes. Raman spectroscopy of the shear mode therefore is a useful tool to determine the number of layers for few-layer MoS2 flakes.
4 pages, 3 figures, submitted to Applied Phys. Lett
References in corpus (7)
- The Raman Fingerprint of Graphene
- Two Dimensional Atomic Crystals
- Anomalous Lattice Vibrations of Single and Few-Layer MoS2
- Integrated Circuits Based on Bilayer MoS2 Transistors
- Laser-thinning of MoS2: on demand generation of a single-layer semiconductor
- Scanning Raman spectroscopy of graphene antidot lattices: Evidence for systematic p-type doping
- Layer number determination in graphene using out-of-plane vibrations