Photogating of mono- and few-layer MoS2

Abstract

We describe a photogating effect in mono- and few-layer MoS2, which allows the control of the charge carrier density by almost two orders of magnitude without electrical contacts. Our Raman studies are consistent with physisorbed environmental molecules, that effectively deplete the intrinsically n-doped charge carrier system via charge transfer, and which can be gradually removed by the exposure to light. This photogating process is reversible and precisely tunable by the light intensity. The photogating efficiency is quantified by comparison with measurements on electrostatically gated MoS2.

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Cited by in corpus (8)

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• Influence of Defects on the Valley Polarization Properties of Monolayer MoS${}_2$ Grown by Chemical Vapor Deposition
• Long-lived spin polarization in n-doped MoSe${}_2$ monolayers
• Semimetal-Monolayer Transition Metal Dichalcogenides Photodetectors for Wafer-Scale Ultraviolet Photonics
• Single- and narrow-line photoluminescence in a boron nitride-supported MoSe${}_2$/graphene heterostructure