Gate-tunable non-volatile photomemory effect in MoS transistors
arXiv:2006.09986 · doi:10.1088/2053-1583/ab0af1
Abstract
Non-volatile memory devices have been limited to flash architectures that are complex devices. Here, we present a unique photomemory effect in MoS transistors. The photomemory is based on a photodoping effect - a controlled way of manipulating the density of free charges in monolayer MoS using a combination of laser exposure and gate voltage application. The photodoping promotes changes on the conductance of MoS leading to photomemory states with high memory on/off ratio. Such memory states are non-volatile with an expectation of retaining up to 50 % of the information for tens of years. Furthermore, we show that the photodoping is gate-tunable, enabling control of the recorded memory states. Finally, we propose a model to explain the photodoping, and we provide experimental evidence supporting such a phenomenon. In summary, our work includes the MoS phototransistors in the non-volatile memory devices and expands the possibilities of memory application beyond conventional memory architectures.
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Cited by in corpus (4)
- Laser-Assisted Multilevel Non-Volatile Memory Device Based on 2D van-der-Waals Few-layer-ReS2/h-BN/Graphene Heterostructures
- Exploring the structural and optoelectronic properties of natural insulating phlogopite in van der Waals heterostructures
- Local photodoping in monolayer MoS2
- Investigation of the Nonlinear Optical Frequency Conversion in Ultrathin Franckeite Heterostructures