104 citations · 282 across the 10 of their papers we have counts for
10 papers
Gate-tunable non-volatile photomemory effect in MoS transistors
Andreij C. Gadelha, Alisson R. Cadore, Kenji Watanabe +5
Non-volatile memory devices have been limited to flash architectures that are complex devices. Here, we present a unique photomemory effect in MoS transistors. The photomemory…
Local photodoping in monolayer MoS2
Andreij C. Gadelha, Alisson R. Cadore, Lucas Lafeta +4
Inducing electrostatic doping in 2D materials by laser exposure (photodoping effect) is an exciting route to tune optoelectronic phenomena. However, there is a lack of investigatio…
Probing the Electronic Properties of Monolayer MoS via Interaction with Molecular Hydrogen
Natália P. Rezende, Alisson R. Cadore, Andreij C. Gadelha +8
This work presents a detailed experimental investigation of the interaction between molecular hydrogen (H) and monolayer MoS field effect transistors (MoS FET), aiming…
Reversible doping of graphene field effect transistors by molecular hydrogen: the role of the metal/graphene interface
C. L. Pereira, A. R. Cadore, N. P. Rezende +5
In this work, we present an investigation regarding how and why molecular hydrogen changes the electronic properties of graphene field effect transistors. We demonstrate that inter…
Enhancing the response of NH3 graphene-sensors by using devices with different graphene-substrate distances
A. R. Cadore, E. Mania, A. B. Alencar +7
Graphene (G) is a two-dimensional material with exceptional sensing properties. In general, graphene gas sensors are produced in field effect transistor configuration on several su…
Thermo Activated Hysteresis on High Quality Graphene/h-BN Devices
A. R. Cadore, E. Mania, K. Watanabe +3
We report on gate hysteresis in resistance on high quality graphene/h-BN devices. We observe a thermal activated hysteretic behavior in resistance as a function of the applied gate…