Splitting of interlayer shear modes and photon energy dependent anisotropic Raman response in -layer ReSe and ReS
arXiv:1512.03842 · doi:10.1021/acsnano.5b07844
Abstract
We investigate the interlayer phonon modes in -layer rhenium diselenide (ReSe) and rhenium disulfide (ReS) by means of ultralow-frequency micro-Raman spectroscopy. These transition metal dichalcogenides exhibit a stable distorted octahedral (1T') phase with significant in-plane anisotropy, leading to sizable splitting of the (in-plane) layer shear modes. The fan-diagrams associated with the measured frequencies of the interlayer shear modes and the (out-of-plane) interlayer breathing modes are perfectly described by a finite linear chain model and allow the determination of the interlayer force constants. Nearly identical values are found for ReSe and ReS. The latter are appreciably smaller than but on the same order of magnitude as the interlayer force constants reported in graphite and in trigonal prismatic (2Hc) transition metal dichalcogenides (such as MoS, MoSe, MoTe, WS, WSe), demonstrating the importance of van der Waals interactions in -layer ReSe and ReS. In-plane anisotropy results in a complex angular dependence of the intensity of all Raman modes, which can be empirically utilized to determine the crystal orientation. However, we also demonstrate that the angular dependence of the Raman response drastically depends on the incoming photon energy, shedding light on the importance of resonant exciton-phonon coupling in ReSe and ReS.
References in corpus (12)
- Observation of interlayer phonon modes in van der Waals heterostructures
- Anomalous polarization dependence of Raman scattering and crystallographic orientation of black phosphorus
- Raman spectroscopy of the interlayer shear mode in few-layer MoS2 flakes
- Observation of Low-frequency Interlayer Breathing Modes in Few-layer Black Phosphorus
- Coupling and stacking order of ReS2 atomic layers revealed by ultralow-frequency Raman spectroscopy
- Anomalous excitonic resonance Raman effects in few-layer MoS2
- Polytypism and Unexpected Strong Interlayer Coupling of two-Dimensional Layered ReS2
- Large Frequency Change with Thickness in Interlayer Breathing Mode - Significant Interlayer Interactions in Few Layer Black Phosphorus
- Newly observed first-order resonant Raman modes in few-layer MoS
- Temperature-activated layer-breathing vibrations in few-layer graphene
- Observation of anisotropic interlayer Raman modes in few-layer ReS2
- Group Theory analysis of phonons in two-dimensional Transition Metal Dichalcogenides
Cited by in corpus (15)
- Polytypism and Unexpected Strong Interlayer Coupling of two-Dimensional Layered ReS2
- Strain-shear coupling in bilayer MoS2
- Low-Frequency Raman Spectroscopy of Few-Layer 2H-SnS2
- Twistronics: A turning point in 2D quantum materials
- Direct observation of the band gap transition in atomically thin ReS
- Complete determination of crystallographic orientation of ReX2 (X=S, Se) by polarized Raman spectroscopy
- Direct versus indirect band gap emission and exciton-exciton annihilation in atomically thin molybdenum ditelluride (MoTe)
- Stacking-Dependent Interlayer Phonons in 3R and 2H MoS
- Pressure dependence of direct optical transitions in ReS2 and ReSe2
- Electronic bandstructure and van der Waals coupling of ReSe2 revealed by high-resolution angle-resolved photoemission spectroscopy
- Shear and breathing modes of layered materials
- Optical phonons of SnSe(1-x)Sx layered semiconductor alloys
- The optical signature of few-layer ReSe
- Rigid-layer Raman-active modes in -layer Transition Metal Dichalcogenides: interlayer force constants and hyperspectral Raman imaging
- Doping controlled Fano resonance in bilayer 1T-ReS: Raman experiments and first-principles theoretical analysis