Observation of Low-frequency Interlayer Breathing Modes in Few-layer Black Phosphorus

Abstract

As a new two-dimensional layered material, black phosphorus (BP) is a promising material for nanoelectronics and nano-optoelectronics. We use Raman spectroscopy and first-principles theory to report our findings related to low-frequency (LF) interlayer breathing modes (<100 cm-1) in few-layer BP for the first time. The breathing modes are assigned to Ag symmetry by the laser polarization dependence study and group theory analysis. Compared to the high-frequency (HF) Raman modes, the LF breathing modes are much more sensitive to interlayer coupling and thus their frequencies show much stronger dependence on the number of layers. Hence, they could be used as effective means to probe both the crystalline orientation and thickness for few-layer BP. Furthermore, the temperature dependence study shows that the breathing modes have a harmonic behavior, in contrast to HF Raman modes which are known to exhibit anharmonicity.

5 figures, 39 pages

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Cited by in corpus (11)

• Auxetic Black Phosphorus: A 2D Material with Negative Poisson's Ratio
• Ab initio study of electron-phonon interaction in phosphorene
• Low-Symmetry Two-Dimensional Materials for Electronic and Photonic Applications
• Collective Excitations in 2D Materials
• Stacking-Dependent Interlayer Phonons in 3R and 2H MoS${}_2$
• Interatomic force constants including the DFT-D dispersion contribution
• Interlayer bond polarizability model for stacking-dependent low-frequency Raman scattering in layered materials
• Second-Order Raman Scattering in Exfoliated Black Phosphorus
• Anisotropic Charge Carrier and Coherent Acoustic Phonon Dynamics of Black Phosphorus Studied by Transient Absorption Microscopy
• The impact of hexagonal boron nitride encapsulation on the structural and vibrational properties of few layer black phosphorus
• Vibrational Properties of a Naturally Occurring Semiconducting van der Waals heterostructure