The optical signature of few-layer ReSe
arXiv:2005.12878 · doi:10.1063/5.0015289
Abstract
Optical properties of thin layers of rhenium diselenide (ReSe) with thickness ranging from mono- (1 ML) to nona-layer (9 MLs) are demonstrated. The photoluminescence (PL) and Raman scattering were measured at low (=5 K) and room (=300 K) temperature, respectively. The PL spectra of ReSe layers display two well-resolved emission lines, which blueshift by about 120 meV when the layer thickness decreases from 9 MLs to a monolayer. A rich structure of the observed low-energy Raman scattering modes can be explained within a linear chain model. The two phonon modes of intralayer vibrations, observed in Raman scattering spectra at about 120 cm, exhibit very sensitive and opposite evolution as a function of layer thickness. It is shown that their energy difference can serve as a convenient and reliable tool to determine the thickness of ReSe flakes in the few-layer limit.
arXiv comment5 pages, 6 figures
References in corpus (14)
- Anomalous Lattice Vibrations of Single and Few-Layer MoS2
- Excitons in atomically thin transition metal dichalcogenides
- Helicity resolved Raman scattering of MoS2, MoSe2, WS2 and WSe2 atomic layers
- Optical properties of atomically thin transition metal dichalcogenides: Observations and puzzles
- Splitting of interlayer shear modes and photon energy dependent anisotropic Raman response in -layer ReSe and ReS
- Interlayer Interactions in Anisotropic Atomically-thin Rhenium Diselenide
- Unified description of the optical phonon modes in -layer MoTe
- Anomalous Frequency Trends in MoS2 Thin Films Attributed to Surface Effects
- Raman scattering in few-layer MoTe
- Direct observation of the band gap transition in atomically thin ReS
- Complete determination of crystallographic orientation of ReX2 (X=S, Se) by polarized Raman spectroscopy
- Electronic bandstructure and van der Waals coupling of ReSe2 revealed by high-resolution angle-resolved photoemission spectroscopy
- Phase Modulators Based on High Mobility Ambipolar ReSe2 Field-Effect Transistors
- Rigid-layer Raman-active modes in -layer Transition Metal Dichalcogenides: interlayer force constants and hyperspectral Raman imaging
Cited by in corpus (7)
- Anisotropic Optical And Vibrational Properties Of GeS
- Beyond Graphene: Low-Symmetry and Anisotropic 2D Materials
- The optical response of artificially twisted MoS bilayers
- Resonance and antiresonance in Raman scattering in GaSe and InSe crystals
- Resonant Raman Scattering of Few Layers CrBr
- Exchange-split multiple Rydberg series of excitons in anisotropic quasi two-dimensional ReS
- External screening and lifetime of exciton population in single-layer ReSe probed by time- and angle-resolved photoemission spectroscopy